MBR10L60CTG ON Semiconductor, MBR10L60CTG Datasheet - Page 4

• Manufacturer Part Number: MBR10L60CTG
• Description: DIODE SCHOTTKY 60V 5A TO220-3
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MBR10L60CTG

• Voltage - Forward (vf) (max) @ If: 570mV @ 5A
• Current - Reverse Leakage @ Vr: 220µA @ 60V
• Current - Average Rectified (io) (per Diode): 5A
• Voltage - Dc Reverse (vr) (max): 60V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Product: Schottky Diodes
• Peak Reverse Voltage: 60 V
• Forward Continuous Current: 10 A
• Max Surge Current: 200 A
• Configuration: Dual Common Anode
• Forward Voltage Drop: 0.66 V
• Maximum Reverse Leakage Current: 220 uA
• Operating Temperature Range: - 55 C to + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

0.01
10
0.1
9
8
7
6
5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
0.000001
10
80
0
1
Figure 7. Current Derating, Case per Leg
0.01
T
1
0.05
0.1
90
J
Figure 9. Forward Power Dissipation
I
= 150°C
O
D =
0.5
, AVERAGE FORWARD CURRENT (A)
SINGLE PULSE
SQUARE WAVE
2
0.2
0.00001
T
100
C
, CASE TEMPERATURE (°C)
3
dc
MBRF10L60CT
110
Figure 11. Thermal Response Junction−to−Case for MBR10L60CT
4
SQUARE WAVE
0.0001
120
5
6
130
7
R
qJC
0.001
140
dc
= 5.7°C/W
8
150
http://onsemi.com
9
t
1
, TIME (sec)
160
0.01
10
4
10000
1000
100
10
6
5
4
3
2
1
0
0.1
0
0
Figure 8. Current Derating, Ambient per Leg
20
10
T
A
dc
, AMBIENT TEMPERATURE (°C)
40
P
SQUARE WAVE
V
1
Figure 10. Capacitance
(pk)
R
, REVERSE VOLTAGE (V)
20
MBRF10L60CT
DUTY CYCLE, D = t
60
10
80
30
t
1
t
2
100
40
R
100
1
120
qJA
/t
2
T
J
= 75°C/W
= 25°C
50
140 160
1000
60