MBR30H100CTG ON Semiconductor, MBR30H100CTG Datasheet - Page 2

• Manufacturer Part Number: MBR30H100CTG
• Description: DIODE SCHOTTKY 100V 15A TO-220AB
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MBR30H100CTG

• Voltage - Forward (vf) (max) @ If: 800mV @ 15A
• Current - Reverse Leakage @ Vr: 4.5µA @ 100V
• Current - Average Rectified (io) (per Diode): 15A
• Voltage - Dc Reverse (vr) (max): 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Product: Schottky Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 30 A
• Max Surge Current: 250 A
• Configuration: Dual Common Cathode
• Forward Voltage Drop: 0.93 V
• Maximum Reverse Leakage Current: 4.5 uA
• Operating Temperature Range: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
DEVICE ORDERING INFORMATION
MBR30H100CT
MBR30H100CTG
MBRF30H100CTG
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
Peak Repetitive Forward Current
Nonrepetitive Peak Surge Current
Operating Junction Temperature (Note 1)
Storage Temperature
Voltage Rate of Change (Rated V
Controlled Avalanche Energy (see test conditions in Figures 13 and 14)
ESD Ratings: Machine Model = C
Maximum Thermal Resistance
Maximum Instantaneous Forward Voltage (Note 2)
Maximum Instantaneous Reverse Current (Note 2)
Working Peak Reverse Voltage
DC Blocking Voltage
(T
(Square Wave, 20 kHz, T
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
(MBR30H100CT)
(MBRF30H100CT)
(i
(i
(i
(i
(Rated DC Voltage, T
(Rated DC Voltage, T
F
F
F
F
C
= 15 A, T
= 15 A, T
= 30 A, T
= 30 A, T
= 156°C)
Device Order Number
J
J
J
J
Human Body Model = 3B
= 25°C)
= 125°C)
= 25°C)
= 125°C)
(Per Diode Leg)
J
J
= 125°C)
= 25°C)
Per Diode
Per Device
C
Characteristic
= 151°C)
R
)
Characteristic
(Per Diode Leg)
Rating
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Case
− Junction−to−Ambient
http://onsemi.com
Package Type
TO−220FP
(Pb−Free)
(Pb−Free)
TO−220
TO−220
2
Symbol
v
i
R
F
Min
−
−
−
−
−
−
Symbol
D
Symbol
W
V
V
I
/dT
dv/dt
R
R
R
R
I
F(AV)
T
I
FSM
RWM
RRM
V
T
AVAL
FM
qJC
qJC
stg
qJA
qJA
R
J
J
< 1/R
0.0008
0.76
0.64
0.88
0.76
Typ
1.1
qJA
50 Units / Rail
50 Units / Rail
50 Units / Rail
Shipping
*65 to +175
.
10,000
> 8000
Value
Value
> 400
+175
100
250
200
2.0
4.2
15
30
30
60
75
0.0045
Max
0.80
0.67
0.93
0.80
†
6.0
°C/W
Unit
V/ms
Unit
mJ
°C
°C
V
A
A
A
V
Unit
mA
V