MBR30H100CTG ON Semiconductor, MBR30H100CTG Datasheet - Page 5

• Manufacturer Part Number: MBR30H100CTG
• Description: DIODE SCHOTTKY 100V 15A TO-220AB
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MBR30H100CTG

• Voltage - Forward (vf) (max) @ If: 800mV @ 15A
• Current - Reverse Leakage @ Vr: 4.5µA @ 100V
• Current - Average Rectified (io) (per Diode): 15A
• Voltage - Dc Reverse (vr) (max): 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Product: Schottky Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 30 A
• Max Surge Current: 250 A
• Configuration: Dual Common Cathode
• Forward Voltage Drop: 0.93 V
• Maximum Reverse Leakage Current: 4.5 uA
• Operating Temperature Range: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

0.001
0.001
0.01
0.01
0.000001
100
0.000001
1.0
0.1
1.0
0.1
10
10
D = 0.5
0.05
0.02
0.01
0.05
0.02
D = 0.5
0.01
0.2
0.1
0.2
0.1
SINGLE PULSE
SINGLE PULSE
0.00001
0.00001
Figure 12. Thermal Response Junction−to−Ambient for MBRF30H100CT
Figure 11. Thermal Response Junction−to−Case for MBRF30H100CT
0.0001
0.0001
0.001
0.001
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t
t
1
1
, TIME (sec)
, TIME (sec)
0.01
0.01
5
P
(pk)
0.1
0.1
P
(pk)
DUTY CYCLE, D = t
DUTY CYCLE, D = t
t
1
t
1
t
2
t
2
1.0
1.0
1
/t
2
1
/t
2
Z
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
qJC
J(pk)
qJC
Z
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
10
10
qJC
J(pk)
qJC
(t) = r(t) R
= 1.6°C/W MAX
- T
(t) = r(t) R
= 1.6°C/W MAX
- T
C
= P
C
= P
qJC
(pk)
1
qJC
(pk)
Z
100
100
1
qJC
Z
qJC
(t)
(t)
1000
1000