MURHB860CTT4G ON Semiconductor, MURHB860CTT4G Datasheet

DIODE ULTRA FAST 4A 600V D2PAK

MURHB860CTT4G

Manufacturer Part Number
MURHB860CTT4G
Description
DIODE ULTRA FAST 4A 600V D2PAK
Manufacturer
ON Semiconductor
Series
MEGAHERTZ™r
Datasheet

Specifications of MURHB860CTT4G

Voltage - Forward (vf) (max) @ If
2.8V @ 4A
Current - Reverse Leakage @ Vr
10µA @ 600V
Current - Average Rectified (io) (per Diode)
4A
Voltage - Dc Reverse (vr) (max)
600V
Reverse Recovery Time (trr)
35ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MURHB860CTT4GOS
MURHB860CTT4GOS
MURHB860CTT4GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MURHB860CTT4G
Manufacturer:
ON Semiconductor
Quantity:
500
Part Number:
MURHB860CTT4G
Manufacturer:
ON
Quantity:
12 500
Part Number:
MURHB860CTT4G
Manufacturer:
ON/安森美
Quantity:
20 000
MURHB860CT
MEGAHERTZt
Power Rectifier
D
power supplies, inverters and as free wheeling diodes.
Features
Mechanical Characteristics:
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 2
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V
Peak Repetitive Forward Current (Rated
V
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
Operating Junction and Storage
Temperature Range
These state−of−the−art devices are designed for use in switching
2
Leads are Readily Solderable
260°C Max. for 10 Seconds
Package Designed for Power Surface Mount Applications
Ultrafast 35 Nanosecond Recovery Times
175°C Operating Junction Temperature
Epoxy Meets UL 94 V−0 @ 0.125 in
High Temperature Glass Passivated Junction
High Voltage Capability to 600 V
Low Leakage Specified @ 150°C Case Temperature
Short Heat Sink Tab Manufactured − Not Sheared!
Similar in Size to Industry Standard TO−220 Package
Pb−Free Packages are Available
Case: Epoxy, Molded
Weight: 1.7 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Lead and Mounting Surface Temperature for Soldering Purposes:
R
, Square Wave, 20 kHz, T
PAK Power Surface Mount Package
R
, T
C
= 120°C) Total Device
Rating
(Per Leg)
C
Preferred Device
= 120°C)
Symbol
T
V
V
I
I
J
F(AV)
RWM
I
FSM
RRM
V
, T
FM
R
stg
−65 to +175
Value
600
100
4.0
8.0
8.0
1
Unit
°C
V
A
A
A
†For information on tape and reel specifications,
Preferred devices are recommended choices for future use
and best overall value.
MURHB860CT
MURHB860CTG
MURHB860CTT4
MURHB860CTT4G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Device
8.0 AMPERES, 600 VOLTS
1
ULTRAFAST RECTIFIER
ORDERING INFORMATION
3
A
Y
WW
UH860 = Device Code
G
AKA
MARKING DIAGRAM
http://onsemi.com
1
3
= Assembly Location
= Year
= Work Week
= Pb−Free Package
= Diode Polarity
AY WW
UH860G
(Pb−Free)
(Pb−Free)
Package
D
D
D
D
AKA
4
2
2
2
2
Publication Order Number:
PAK
PAK
PAK
PAK
CASE 418B
STYLE 3
D
800/Tape & Reel
800/Tape & Reel
MURHB860CT/D
2
4
PAK
50 Units/Rail
50 Units/Rail
Shipping

Related parts for MURHB860CTT4G

MURHB860CTT4G Summary of contents

Page 1

... MURHB860CTG ° −65 to +175 J stg MURHB860CTT4 MURHB860CTT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. 1 http://onsemi ...

Page 2

THERMAL CHARACTERISTICS (Per Leg) Maximum Thermal Resistance, Junction−to−Case Maximum Thermal Resistance, Junction−to−Ambient ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 4 150° 4 25° Maximum ...

Page 3

... PL 0.13 (0.005 VARIABLE CONFIGURATION ZONE VIEW W−W VIEW W−W 1 10.66 0.42 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. MURHB860CT PACKAGE DIMENSIONS 2 D PAK 3 CASE 418B−04 ISSUE ...

Page 4

... Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com MURHB860CT N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 4 ON Semiconductor Website: http://onsemi ...

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