MURHB860CTT4G ON Semiconductor, MURHB860CTT4G Datasheet - Page 2

• Manufacturer Part Number: MURHB860CTT4G
• Description: DIODE ULTRA FAST 4A 600V D2PAK
• Manufacturer: ON Semiconductor
• Series: MEGAHERTZ™r

Specifications of MURHB860CTT4G

• Voltage - Forward (vf) (max) @ If: 2.8V @ 4A
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Current - Average Rectified (io) (per Diode): 4A
• Voltage - Dc Reverse (vr) (max): 600V
• Reverse Recovery Time (trr): 35ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MURHB860CTT4GOS; MURHB860CTT4GOS; MURHB860CTT4GOSTR

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Maximum Thermal Resistance, Junction−to−Case
Maximum Thermal Resistance, Junction−to−Ambient
Maximum Instantaneous Forward Voltage (Note 1)
Maximum Instantaneous Reverse Current (Note 1)
Maximum Reverse Recovery Time (I
(i
(i
(Rated DC Voltage, T
(Rated DC Voltage, T
F
F
= 4.0 A, T
= 4.0 A, T
C
C
= 150°C)
= 25°C)
C
C
= 150°C)
= 25°C)
F
(Per Leg)
= 1.0 A, di/dt = 50 A/ms)
Characteristic
(Per Leg)
Rating
http://onsemi.com
MURHB860CT
2
Symbol
Symbol
R
R
v
qJC
i
t
qJA
R
rr
F
Value
Max
500
3.0
2.5
2.8
50
10
35
°C/W
°C/W
Unit
Unit
mA
ns
V