CSD20030D Cree Inc, CSD20030D Datasheet - Page 2

• Manufacturer Part Number: CSD20030D
• Description: DIODE SCHOTTKY 300V 20A TO-247
• Manufacturer: Cree Inc

Specifications of CSD20030D

• Voltage - Forward (vf) (max) @ If: 1.4V @ 10A
• Current - Reverse Leakage @ Vr: 200µA @ 300V
• Current - Average Rectified (io) (per Diode): 10A
• Voltage - Dc Reverse (vr) (max): 300V
• Reverse Recovery Time (trr): 0ns
• Diode Type: Silicon Carbide Schottky
• Speed: No Recovery Time > 500mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole, Radial
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS (PER LEG)
Parameter
Forward Voltage
Reverse Current
Total Capacitive Charge
V
Total Capacitance
V
V
V
NOTE:
1. This is a majority carrier diode, so there is no reverse recovery charge.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance from Junction to Case
Typical Performance (Per Leg)
Page 2 • CSD20030, Rev A
R
R
R
R
I
I
V
V
= 300V,I
= 0V, T
= 150V, T
= 300V, T
F
F
20
18
16
14
12
10
R
R
8
6
4
2
0
= 10A T
= 10A T
0.0
= 300V T
= 300V T
Figure 1. Forward Characteristics
J
F
= 25°C, f =1MHz
J
J
= 10A, di/dt = 500 A/µs, T
J
J
=25°C
=175°C
= 25°C, f =1MHz
= 25°C, f =1MHz
0.5
J
J
=25°C
=175°C
T
T
T
T
J
J
J
J
= 25 °C
= 75 °C
= 125 °C
= 175 °C
V
F
FORWARD VOLTAGE (V)
1.0
1.5
J
= 25°C
2.0
PRELIMINARY
Per Leg
Per Device
2.5
1000
Symbol
900
800
700
600
500
400
300
200
100
R
R
Figure 2. Reverse Characteristics
0
Symbol
θJC
θJC
0
Q
V
I
C
R
F
C
T
T
T
T
T
100
J
J
J
J
J
= 25
= 75
= 125
= 150
= 175
0
0
Min
0
0
0
C
C
C
C
C
Min
V
200
R
Reverse Voltage (V)
1000
11.5
Typ
660
300
1.2
1.4
50
62
58
0.95
Typ
1.9
CSD20030
400
Max
2000
200
1.4
1.8
Max
500
Units
nC
µA
pF
Units
°C/W
°C/W
V
600