CSD20060D Cree Inc, CSD20060D Datasheet - Page 2

• Manufacturer Part Number: CSD20060D
• Description: DIODE SCHOTTKY 600V 16.5A TO-247
• Manufacturer: Cree Inc

Specifications of CSD20060D

• Voltage - Forward (vf) (max) @ If: 1.8V @ 10A
• Current - Reverse Leakage @ Vr: 200µA @ 600V
• Current - Average Rectified (io) (per Diode): 16.5A
• Voltage - Dc Reverse (vr) (max): 600V
• Reverse Recovery Time (trr): 0ns
• Diode Type: Silicon Carbide Schottky
• Speed: No Recovery Time > 500mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole, Radial
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Note:
1.
Typical Performance (Per Leg)
Electrical Characteristics (Per Leg)
Thermal Characteristics
2
Symbol
Symbol
**
Per Leg,
This is a majority carrier diode, so there is no reverse recovery charge.
R
0
Q
V
20
18
16
14
12
10
I
C
θJC
R
8
6
4
2
0
F
C
CSD20060D Rev. Q
Forward Voltage
Reverse Current
Total Capacitive Charge
Total Capacitance
Parameter
Thermal Resistance from Junction to Case
1.0 2.0 3.0 4.0
Figure 1. Forward Characteristics
*
Both Legs
Parameter
Typ.
100
550
1.5
2.0
50
28
65
50
Max.
1000
200
1.8
2.4
1.08
Typ.
0.54
**
*
Unit
nC
μA
pF
V
200
180
160
140
120
100
°C/W
Unit
0
80
60
40
20
0
I
I
V
V
V
di/dt = 500 A/μs
T
V
V
V
F
F
J
R
R
R
R
R
R
= 10 A T
= 10 A T
= 25°C
= 600 V, I
= 0 V, T
= 200 V, T
= 400 V, T
= 600 V T
= 600 V T
100 200 300 400 500 600 700
Figure 2. Reverse Characteristics
J
= 25°C, f = 1 MHz
J
J
=25°C
=175°C
Test Conditions
F
J
J
J
J
= 10 A
= 25˚C, f = 1 MHz
= 25˚C, f = 1 MHz
=25°C
=175°C
Note