MBR2535CT ON Semiconductor, MBR2535CT Datasheet
MBR2535CT
Specifications of MBR2535CT
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MBR2535CT Summary of contents
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... MBR2535CTG, MBR2545CTG SWITCHMODE] Power Rectifiers The MBR2535CT/45CT series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guardring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • ...
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... When mounted using minimum recommended pad size on FR−4 board. ELECTRICAL CHARACTERISTICS Symbol Characteristic V Instantaneous Forward Voltage F (Note 3) I Instantaneous Reverse Current R (Note 3) 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. MBR2535CT MBR2545CT Per Device Per Diode = 150°C) C (Per Diode) Condition Amp 25° ...
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T = 125° 150°C 1.0 25°C 0.1 0 0.2 0.4 0.6 0.8 1 INSTANTANEOUS FORWARD VOLTAGE (VOLTS) F Figure 1. Typical Forward Voltage, Per Leg SQUARE WAVE ...
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... S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 --- 1.15 --- Z --- 0.080 --- 2.04 STYLE 6: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MBR2535CT/D ...