MBR2535CT ON Semiconductor, MBR2535CT Datasheet - Page 2

• Manufacturer Part Number: MBR2535CT
• Description: DIODE SCHOTTKY 35V 30A TO220AB
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MBR2535CT

• Voltage - Forward (vf) (max) @ If: 820mV @ 30A
• Current - Reverse Leakage @ Vr: 200µA @ 35V
• Current - Average Rectified (io) (per Diode): 30A
• Voltage - Dc Reverse (vr) (max): 35V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Dc: 03+
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Reverse Recovery Time (trr): -
• Other names: MBR2535CTOS

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
2. When mounted using minimum recommended pad size on FR−4 board.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Thermal Resistance,− Junction−to−Case
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
Peak Repetitive Forward Current,
Non−Repetitive Peak Surge Current per Diode Leg
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
Storage Temperature Range
Operating Junction Temperature (Note 1)
Voltage Rate of Change (Rated V
ESD Ratings: Machine Model = C
ESD Ratings:
Average Rectified Forward Current
Symbol
(Rated V
DC Blocking Voltage
per Diode Leg (Rated V
(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz)
V
I
R
F
R
, T
Human Body Model = 3B
Instantaneous Forward Voltage
Instantaneous Reverse Current
C
(Note 3)
(Note 3)
= 160°C)
− Junction−to−Ambient (Note 2)
Characteristic
R
, Square Wave, 20 kHz, T
R
)
Rating
Characteristic
(Per Leg)
(Per Diode)
C
I
I
I
I
Rated dc Voltage, T
Rated dc Voltage, T
F
F
F
F
= 150°C)
http://onsemi.com
= 15 Amp, T
= 15 Amp, T
= 30 Amp, T
= 30 Amp, T
Condition
MBR2535CT
MBR2545CT
2
Per Device
Per Diode
J
J
J
J
= 25°C
= 125°C
= 25°C
= 125°C
J
J
= 25°C
= 125°C
Symbol
V
V
I
I
dv/dt
I
I
ESD
F(AV)
FRM
RRM
T
RWM
FSM
RRM
V
T
stg
R
J
Min
−
−
−
−
−
−
Symbol
D
R
R
/dT
qJC
qJA
J
< 1/R
−65 to +175
−65 to +175
0.50
0.65
Typ
10,000
9.0
>8000
Value
>400
−
−
−
qJA
150
1.0
35
45
30
15
30
.
Value
1.5
50
Max
0.62
0.57
0.82
0.72
0.2
25
Unit
V/ms
°C
°C
V
A
A
A
A
V
°C/W
Unit
Unit
mA
V