BAT85,113 NXP Semiconductors, BAT85,113 Datasheet - Page 3

• Manufacturer Part Number: BAT85,113
• Description: DIODE SCHOTTKY 30V 200MA DO34
• Manufacturer: NXP Semiconductors

Specifications of BAT85,113

• Package / Case: DO-204AG, DO-34, Axial
• Voltage - Forward (vf) (max) @ If: 800mV @ 100mA
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io): 200mA (DC)
• Current - Reverse Leakage @ Vr: 2µA @ 25V
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Capacitance @ Vr, F: 10pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 0.2 A @ Ta=50C
• Max Surge Current: 5 A
• Configuration: Single
• Recovery Time: 4 ns
• Forward Voltage Drop: 0.8 V @ 0.1 A
• Maximum Reverse Leakage Current: 2 uA @ 25 V
• Operating Temperature Range: + 125 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1617-2; 933624760113; BAT85 T/R

NXP Semiconductors
ELECTRICAL CHARACTERISTICS
T
THERMAL CHARACTERISTICS
Note
1. Refer to SOD68 standard mounting conditions.
2000 May 25
V
I
t
C
R
SYMBOL
SYMBOL
amb
R
rr
F
Schottky barrier diode
d
th j-a
= 25 °C; unless otherwise specified.
forward voltage
reverse current
reverse recovery time
diode capacitance
thermal resistance from junction to ambient
PARAMETER
PARAMETER
see Fig.3
V
when switched from I
I
measured at I
f = 1 MHz; V
note 1
3
R
R
I
I
I
I
I
= 10 mA; R
F
F
F
F
F
= 25 V; see Fig.4
= 0.1 mA
= 1 mA
= 10 mA
= 30 mA
= 100 mA
CONDITIONS
CONDITIONS
R
L
R
= 1 V; see Fig.5
= 100 Ω;
= 1 mA; see Fig.6
F
= 10 mA to
240
320
400
500
800
2
4
10
VALUE
MAX.
Product data sheet
320
BAT85
mV
mV
mV
mV
mV
μA
ns
pF
UNIT
UNIT
K/W