BAT85,113 NXP Semiconductors, BAT85,113 Datasheet - Page 4

• Manufacturer Part Number: BAT85,113
• Description: DIODE SCHOTTKY 30V 200MA DO34
• Manufacturer: NXP Semiconductors

Specifications of BAT85,113

• Package / Case: DO-204AG, DO-34, Axial
• Voltage - Forward (vf) (max) @ If: 800mV @ 100mA
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io): 200mA (DC)
• Current - Reverse Leakage @ Vr: 2µA @ 25V
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Capacitance @ Vr, F: 10pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 0.2 A @ Ta=50C
• Max Surge Current: 5 A
• Configuration: Single
• Recovery Time: 4 ns
• Forward Voltage Drop: 0.8 V @ 0.1 A
• Maximum Reverse Leakage Current: 2 uA @ 25 V
• Operating Temperature Range: + 125 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1617-2; 933624760113; BAT85 T/R

NXP Semiconductors
GRAPHICAL DATA
2000 May 25
handbook, halfpage
handbook, halfpage
I F(AV)
Schottky barrier diode
(nA)
(mA)
I R
(1) T
(2) T
(3) T
Fig.4
10
10
10
10
10
250
200
150
100
10
50
amb
amb
amb
1
−1
5
4
3
2
0
0
0
= 85 °C.
= 25 °C.
= −40 °C.
Reverse current as a function of reverse
voltage; typical values.
Fig.2 Derating curve.
(3)
(1)
(2)
50
10
100
20
T
amb
V R (V)
MRA540
( C)
o
MGC682
150
30
4
handbook, halfpage
handbook, halfpage
(1) T
(2) T
(3) T
Fig.3
f = 1 MHz.
Fig.5
(mA)
(pF)
C d
10
I F
10
10
12
10
−1
amb
amb
amb
8
4
0
1
3
2
0
0
(1)
= 125 °C.
= 85 °C.
= 25 °C.
Forward current as a function of forward
voltage; typical values.
Diode capacitance as a function of reverse
voltage; typical values.
(2) (3)
0.4
10
(1) (2) (3)
0.8
20
Product data sheet
V R (V)
V F (V)
MGC681
MLD358
BAT85
1.2
30