C3D10060G Cree Inc, C3D10060G Datasheet

DIODE SCHOT 600V 10A ZREC TO263

C3D10060G

Manufacturer Part Number
C3D10060G
Description
DIODE SCHOT 600V 10A ZREC TO263
Manufacturer
Cree Inc
Series
Z-Rec™r
Datasheets

Specifications of C3D10060G

Diode Type
Silicon Carbide Schottky
Voltage - Forward (vf) (max) @ If
1.8V @ 10A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
10A
Current - Reverse Leakage @ Vr
50µA @ 600V
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0ns
Capacitance @ Vr, F
480pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Repetitive Reverse Voltage Vrrm Max
600V
Forward Current If(av)
10A
Forward Voltage Vf Max
1.8V
Forward Surge Current Ifsm Max
90A
Rectifier Type
Schottky Diode
Configuration
Single
Peak Rep Rev Volt
600V
Avg. Forward Curr (max)
10A
Rev Curr
50uA
Peak Non-repetitive Surge Current (max)
90A
Forward Voltage
1.8V
Operating Temp Range
175C
Package Type
TO-263
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
C3D10060G
Manufacturer:
Cree Inc
Quantity:
135
Part Number:
C3D10060G
Manufacturer:
VISHAY
Quantity:
360
Part Number:
C3D10060G
Manufacturer:
ST
Quantity:
20 000
Part Number:
C3D10060G-TR
Manufacturer:
CREE/科锐
Quantity:
20 000
Fig. 1 TO-220-2
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
Power Product Line
CMF20120D
CSD01060A
CSD01060E
C3D06060G
C3D08060G
C3D10060G
C3D20060D
C2D10120D
C2D20120D
C3D02060A
C3D02060E
C3D02060F
C3D03060A
C3D03060E
C3D03060F
C3D04060A
C3D04060E
C3D04060F
C3D06060A
C3D08060A
C3D10060A
C3D04065A
C3D06065A
C3D08065A
C3D10065A
C2D05120A
C2D05120E
C2D10120A
Z-R
V
DSS
1200
ec
(V) R
V
RRM
1200
1200
1200
1200
1200
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
650
650
650
650
TM
(V) I
DS(ON) (T J =25°C)
R
Fig. 2 DPAK
80
Typ
silicon caRbide
ectifieRs
F(AVG)
Copyright © 2001-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice.
Cree, the Cree logo and Zero Recovery are registered trademarks and Z-REC and Z-FET are trademarks of Cree, Inc.
10
10
20
10
10
10
20
1
1
2
2
2
3
3
3
4
4
4
6
6
8
8
4
6
8
5
5
(A)
Max
110
(mΩ)
1.5
1.6
1.6
1.5
1.6
1.6
1.6
1.6
1.6
Typ
1.6
1.6
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.6
1.6
1.6
1.6
1.5
1.5
1.5
V
R
F(T J =25°C)
DS(ON) (T J =125°C)
95
and
Typ
Max
1.7
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.8
1.8
1.8
1.8
1.8
1.8
1.8
Fig. 3 D
Z
eRo
Max
130
(mΩ)
2
Z
PAK
Typ
2.0
2.0
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.9
1.9
1.9
1.9
2.0
2.0
2.0
1.8
1.9
1.9
2.0
2.6
2.6
2.5
2.6
2.5
V
-
-R
F(T J =175°C)
F
eT
I
D (T c =25°C)
(Continuous)
ecoveRy
Max
TM
2.4
2.4
2.4
2.4
2.4
2.4
2.4
2.4
2.4
2.4
2.4
2.4
2.4
2.4
2.4
2.4
2.4
2.4
2.4
2.4
2.4
2.4
3.0
3.0
3.0
3.0
3.0
33
m o
(A)
Fig. 4 TO-247-3
175°C
175°C
175°C
175°C
175°C
175°C
175°C
175°C
175°C
175°C
175°C
175°C
175°C
175°C
175°C
175°C
175°C
175°C
175°C
175°C
175°C
175°C
175°C
175°C
175°C
175°C
175°C
T
sfet
J(Max)
I
D (T c =100°C)
(Continuous)
®
17
R
ectifieRs
(A)
TO-220-2
TO-220-2
TO-220-2
TO-220-2
TO-220-2
TO-220-2
TO-220-2
TO-247-3
TO-220-2
TO-220-2
TO-220-2
TO-220-2
TO-220-2
TO-220-2
TO-247-3
TO-247-3
Full-Pak
Full-Pak
Full-Pak
D
D
D
DPAK
DPAK
DPAK
DPAK
DPAK
2
2
2
PAK
PAK
PAK
Package Type
TO-247-3
Package Type
Fig. 5 Full-Pak
See Fig. 1
See Fig. 2
See Fig. 1
See Fig. 2
See Fig. 5
See Fig. 1
See Fig. 2
See Fig. 5
See Fig. 1
See Fig. 2
See Fig. 5
See Fig. 1
See Fig. 3
See Fig. 1
See Fig. 3
See Fig. 1
See Fig. 3
See Fig. 4
See Fig. 1
See Fig. 2
See Fig. 1
See Fig. 4
See Fig. 4
See Fig. 1
See Fig. 1
See Fig. 1
See Fig. 1
See Fig. 4

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