BAS21HT1G ON Semiconductor, BAS21HT1G Datasheet
BAS21HT1G
Manufacturer Part Number
BAS21HT1G
Description
DIODE SWITCH 200MA 250V SOD323
Manufacturer
ON Semiconductor
Specifications of BAS21HT1G
Voltage - Forward (vf) (max) @ If
1.25V @ 200mA
Voltage - Dc Reverse (vr) (max)
250V
Current - Average Rectified (io)
200mA (DC)
Current - Reverse Leakage @ Vr
100nA @ 200V
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
50ns
Capacitance @ Vr, F
5pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
SC-76, SOD-323, UMD2
Product
Switching Diodes
Peak Reverse Voltage
250 V
Forward Continuous Current
0.2 A
Configuration
Single
Recovery Time
50 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
0.1 uA
Operating Temperature Range
- 55 C to + 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Rectifier Type
Small Signal Switching Diode
Peak Rep Rev Volt
250V
Avg. Forward Curr (max)
0.2A
Rev Curr
0.1uA
Forward Voltage
1.25V
Operating Temp Range
-55C to 150C
Package Type
SOD-323
Rev Recov Time
50ns
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2
Forward Current If(av)
200mA
Repetitive Reverse Voltage Vrrm Max
250V
Forward Voltage Vf Max
1V
Reverse Recovery Time Trr Max
50ns
Forward Surge Current Ifsm Max
625mA
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAS21HT1GOSTR
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Quantity
Price
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
© Semiconductor Components Industries, LLC, 2002
October, 2002 − Rev. 0
DOCUMENT NUMBER:
*For additional information on our Pb−Free strategy and soldering
NEW STANDARD:
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
NOTE 3
1
DESCRIPTION:
C
STYLE 1
b
SCALE 4:1
STATUS:
2
SOLDERING FOOTPRINT*
1
1
STYLE 2
NOTE 5
L
H
D
E
ON SEMICONDUCTOR STANDARD
98ASB17533C
SOD−323
0.025
0.63
0.063
0.112
2
1.60
2.85
2
E
A1
0.033
0.83
http://onsemi.com
CASE 477−02
SOD−323
ISSUE H
A3
A
1
Electronic versions are uncontrolled except when
accessed directly from the Document Repository. Printed
versions are uncontrolled except when stamped
“CONTROLLED COPY” in red.
NOTES:
*This information is generic. Please refer to
STYLE 1:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
5. DIMENSION L IS MEASURED FROM END OF RADIUS.
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
PIN 1. CATHODE (POLARITY BAND)
Y14.5M, 1982.
WITH SOLDER PLATING.
FLASH, PROTRUSIONS OR GATE BURRS.
DIM
H
A1
A3
A
b
C
D
E
L
2. ANODE
E
STYLE 1
MARKING DIAGRAM*
0.089
MIN
0.80
0.00
0.25
1.60
1.15
0.08
2.30
XX = Specific Device Code
M = Date Code
XX M
MILLIMETERS
0.15 REF
NOM
0.90
0.05
0.32
0.12 0.177
1.70
1.25
2.50
GENERIC
MAX
1.00
0.10
1.80
1.35
2.70
0.4
DATE 13 MAR 2007
0.031
0.000
0.010
0.003
0.062
0.045
0.003
0.090
Case Outline Number:
MIN
STYLE 2
STYLE 2:
0.006 REF
XX M
PAGE 1 OF 2
INCHES
0.035 0.040
0.002 0.004
0.012 0.016
0.005 0.007
0.066 0.070
0.049 0.053
0.098 0.105
NOM
NO POLARITY
MAX
XXX
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BAS21HT1G Summary of contents
Page 1
... SOLDERING FOOTPRINT* 0.63 0.025 1.60 0.063 2.85 0.112 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 98ASB17533C DOCUMENT NUMBER: STATUS: ON SEMICONDUCTOR STANDARD NEW STANDARD: © Semiconductor Components Industries, LLC, 2002 October, 2002 − ...
Page 2
... ISSUE C CHANGED OF OWNERSHIP FROM MOTOROLA TO ON SEMICONDUCTOR. ADDED SOD−323 IN USED ON SECTION. REQ TRUHITTE. D ADDED DIM L. ADDED NOTES 4 AND 5. REQ DEWITT. E CORRECTED TITLE. REQ DEWITT. F ADDED NOM VALUES AND CHANGED DIMS TO INDUSTRY STANDARD. REQ TRUHITTE. G CORRECTED ISSUE LETTER. REQ LESLIE. H CREATED CATHODE AND NON−CATHODE BAND OPTIONS. ...