1N5822RLG ON Semiconductor, 1N5822RLG Datasheet - Page 6
![DIODE SCHOTTKY 40V 3A DO201AD](/photos/5/37/53710/1n5822rlg_sml.jpg)
1N5822RLG
Manufacturer Part Number
1N5822RLG
Description
DIODE SCHOTTKY 40V 3A DO201AD
Manufacturer
ON Semiconductor
Specifications of 1N5822RLG
Voltage - Forward (vf) (max) @ If
525mV @ 3A
Voltage - Dc Reverse (vr) (max)
40V
Current - Average Rectified (io)
3A
Current - Reverse Leakage @ Vr
2mA @ 40V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
DO-201AD, Axial
Rectifier Type
Schottky Diode
Configuration
Single
Peak Rep Rev Volt
40V
Avg. Forward Curr (max)
3
Rev Curr
2000uA
Peak Non-repetitive Surge Current (max)
80A
Forward Voltage
0.95@9.4AV
Operating Temp Range
-65C to 125C
Package Type
DO-201AD
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
2
Product
Schottky Diodes
Peak Reverse Voltage
40 V
Forward Continuous Current
3 A
Max Surge Current
80 A
Forward Voltage Drop
0.95 V @ 9.4 A
Maximum Reverse Leakage Current
2000 uA
Operating Temperature Range
- 65 C to + 125 C
Mounting Style
Through Hole
Current, Forward
3 A
Current, Reverse
20 mA
Current, Surge
80 A
Primary Type
Schottky Barrier
Temperature, Junction, Maximum
+125 °C
Temperature, Operating
-65 to +125 °C
Voltage, Forward
0.525 V
Voltage, Reverse
40 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Compliant
Other names
1N5822RLGOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
1N5822RLG
Manufacturer:
ON
Quantity:
30 000
Company:
Part Number:
1N5822RLG
Manufacturer:
ON
Quantity:
13 500
Company:
Part Number:
1N5822RLG
Manufacturer:
ON
Quantity:
1 537
Part Number:
1N5822RLG
Manufacturer:
VISHAY/威世
Quantity:
20 000
for the mountings shown is to be used as typical guideline values
for preliminary engineering, or in case the tie point temperature
cannot be measured.
Figure 6. Forward Power Dissipation 1N5820-22
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
10
0.1
Data shown for thermal resistance junction-to-ambient (R
Capacitive
Loads
I
SINE WAVE
F(AV)
Mounting
I
I
0.2
Method
(FM)
(AV)
TYPICAL VALUES FOR R
, AVERAGE FORWARD CURRENT (AMP)
1
2
3
NOTE 5 — MOUNTING DATA
+ p (Resistive Load)
0.3
5.0
10
20
0.5
1/8
58
50
Lead Length, L (in)
0.7 1.0
1/4
51
59
28
1/2
53
61
qJA
2.0
IN STILL AIR
3/4
55
63
3.0
SQUARE WAVE
T
J
1N5820, 1N5821, 1N5822
≈ 125°C
°C/W
°C/W
°C/W
R
5.0
qJA
dc
http://onsemi.com
7.0 10
qJA
)
6
resistance for any mounting configuration to be found. For
a given total lead length, lowest values occur when one side
of the rectifier is brought as close as possible to the heat sink.
Terms in the model signify:
T
T
R
R
R
P
P
P
(Subscripts (A) and (K) refer to anode and cathode sides,
respectively.) Values for thermal resistance components
are:
R
R
The maximum lead temperature may be found as follows:
T
where n T
É É É É É É É
É É É É É É É
É É É É É É É É
É É É É É É É É
A
D
F
R
NOTE 4 - APPROXIMATE THERMAL CIRCUIT MODEL
L
L
qS
qL
qJ
qL
qJ
Use of the above model permits junction to lead thermal
= Forward Power Dissipation
= Ambient Temperature
= Lead Temperature
= Total Power Dissipation = P
= Reverse Power Dissipation
= T
= Thermal Resistance, Junction-to-Case
= 10°C/W typically and 16°C/W maximum
= Thermal Resistance, Heatsink to Ambient
= Thermal Resistance, Lead-to-Heatsink
= 42°C/W/in typically and 48°C/W/in maximum
T
R
P.C. Board where available
A(A)
qS(A)
copper surface is small.
J(max)
VECTOR PUSH-IN
Mounting Method 1
Mounting Method 2
TERMINALS T-28
L
T
JL
L
L(A)
* n T
[ R
R
qL(A)
qJL
T
JL
C(A)
L
L
· P
R
qJ(A)
D
T
J
T
É
É
É
É
É
P
R
D
J
qJ(K)
F
= Junction Temperature
T
+ P
C
T
BOARD GROUND
= Case Temperature
C(K)
R
Mounting Method 3
copper surface.
P.C. Board with
2-1/2, x 2-1/2,
L = 1/2″
R
PLANE
qL(K)
T
L(K)
R
T
qS(K)
A(K)