MBRS2H100T3G ON Semiconductor, MBRS2H100T3G Datasheet - Page 2

• Manufacturer Part Number: MBRS2H100T3G
• Description: DIODE SCHOTTKY 2A 100V SMB
• Manufacturer: ON Semiconductor

Specifications of MBRS2H100T3G

• Voltage - Forward (vf) (max) @ If: 790mV @ 2A
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 2A
• Current - Reverse Leakage @ Vr: 8µA @ 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Product: Schottky Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 2 A
• Max Surge Current: 130 A
• Configuration: Single
• Forward Voltage Drop: 0.79 V
• Maximum Reverse Leakage Current: 8 uA
• Operating Temperature Range: - 65 C to + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MBRS2H100T3G; MBRS2H100T3GOSTR

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from
2. Mounted with 700 mm square copper pad size (Approximately 1 inch square) 1 oz FR4 Board.
3. Mounted with minimum recommended pad size 1 oz FR4 Board.
4. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(T
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Storage Temperature Range
Operating Junction Temperature (Note 1)
Thermal Resistance, Junction−to−Lead (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 3)
Maximum Instantaneous Forward Voltage (Note 4)
Maximum Instantaneous Reverse Current (Note 4)
Junction−to−Ambient: dP
L
= 150°C)
Characteristic
Characteristic
D
/dT
J
< 1/R
qJA
.
Rating
MBRS2H100
MBRS2H100
MBRS2H100
MBRA2H100
MBRA2H100
MBRA2H100
(V
http://onsemi.com
(i
R
F
= 100 V)
= 2.0 A)
2
Symbol
Symbol
Y
R
R
v
I
qJA
qJA
JCL
R
F
T
J
0.008
0.79
= 25°C
Symbol
V
V
I
T
FSM
RWM
RRM
V
T
I
stg
O
R
J
Value
Value
275
230
14
12
75
71
T
−65 to +175
−65 to +175
J
= 125°C
0.65
1.5
Value
100
130
2.0
°C/W
°C/W
°C/W
Unit
Unit
Unit
mA
°C
°C
V
A
A
V