1N5819G ON Semiconductor, 1N5819G Datasheet - Page 2

• Manufacturer Part Number: 1N5819G
• Description: DIODE SCHOTTKY 1A 40V DO-41
• Manufacturer: ON Semiconductor

Specifications of 1N5819G

• Voltage - Forward (vf) (max) @ If: 600mV @ 1A
• Voltage - Dc Reverse (vr) (max): 40V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 1mA @ 40V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Rectifier Type: Schottky Diode
• Configuration: Single
• Peak Rep Rev Volt: 40V
• Avg. Forward Curr (max): 1A
• Rev Curr: 1000uA
• Peak Non-repetitive Surge Current (max): 25A
• Forward Voltage: 0.9@3AV
• Operating Temp Range: -65C to 125C
• Package Type: DO-41
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 2
• Product: Schottky Diodes
• Peak Reverse Voltage: 40 V
• Forward Continuous Current: 1 A @ Ta=55C
• Max Surge Current: 25 A
• Forward Voltage Drop: 0.9 V @ 3 A
• Maximum Reverse Leakage Current: 1000 uA
• Operating Temperature Range: - 65 C to + 125 C
• Mounting Style: Through Hole
• Current, Forward: 1 A
• Current, Reverse: 10 mA
• Current, Surge: 25 A
• Primary Type: Schottky Barrier
• Temperature, Junction, Maximum: +125 °C
• Temperature, Operating: -65 to +125 °C
• Voltage, Forward: 0.6 V
• Voltage, Reverse: 40 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 1N5819G; 1N5819GOS

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Lead Temperature reference is cathode lead 1/32 in from case.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Non−Repetitive Peak Reverse Voltage
RMS Reverse Voltage
Average Rectified Forward Current (Note 1), (V
R
Ambient Temperature (Rated V
Non−Repetitive Peak Surge Current, (Surge applied at rated load conditions,
half−wave, single phase 60 Hz, T
Operating and Storage Junction Temperature Range (Reverse Voltage applied)
Peak Operating Junction Temperature (Forward Current applied)
Thermal Resistance, Junction−to−Ambient
Maximum Instantaneous Forward Voltage (Note 2)
Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2)
qJA
= 80°C/W, P.C. Board Mounting, see Note 2, T
R
(dc), P
L
Characteristic
Characteristic
= 70°C)
(Note 1)
Rating
F(AV)
(T
L
= 0, R
= 25°C unless otherwise noted) (Note 1)
R(equiv)
1N5817, 1N5818, 1N5819
qJA
A
= 55°C)
= 80°C/W)
≤ 0.2 V
http://onsemi.com
R
(dc), T
2
L
(T
= 90°C,
(T
(i
(i
(i
L
F
F
F
L
= 100°C)
= 0.1 A)
= 1.0 A)
= 3.0 A)
= 25°C)
Symbol
V
Symbol
Symbol
T
V
V
V
T
R(RMS)
R
I
J
RWM
FSM
RRM
V
J(pk)
RSM
T
, T
I
v
I
qJA
O
R
A
F
R
stg
1N5817
1N5817
0.32
0.45
0.75
1.0
20
24
14
85
10
25 (for one cycle)
−65 to +125
1N5818
1N5818
0.875
Max
0.33
0.55
150
1.0
1.0
30
36
21
80
80
10
1N5819
1N5819
0.34
0.6
0.9
1.0
40
48
28
75
10
°C/W
Unit
Unit
Unit
mA
°C
°C
°C
V
V
V
A
A
V