1N5819G ON Semiconductor, 1N5819G Datasheet - Page 6

• Manufacturer Part Number: 1N5819G
• Description: DIODE SCHOTTKY 1A 40V DO-41
• Manufacturer: ON Semiconductor

Specifications of 1N5819G

• Voltage - Forward (vf) (max) @ If: 600mV @ 1A
• Voltage - Dc Reverse (vr) (max): 40V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 1mA @ 40V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Rectifier Type: Schottky Diode
• Configuration: Single
• Peak Rep Rev Volt: 40V
• Avg. Forward Curr (max): 1A
• Rev Curr: 1000uA
• Peak Non-repetitive Surge Current (max): 25A
• Forward Voltage: 0.9@3AV
• Operating Temp Range: -65C to 125C
• Package Type: DO-41
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 2
• Product: Schottky Diodes
• Peak Reverse Voltage: 40 V
• Forward Continuous Current: 1 A @ Ta=55C
• Max Surge Current: 25 A
• Forward Voltage Drop: 0.9 V @ 3 A
• Maximum Reverse Leakage Current: 1000 uA
• Operating Temperature Range: - 65 C to + 125 C
• Mounting Style: Through Hole
• Current, Forward: 1 A
• Current, Reverse: 10 mA
• Current, Surge: 25 A
• Primary Type: Schottky Barrier
• Temperature, Junction, Maximum: +125 °C
• Temperature, Operating: -65 to +125 °C
• Voltage, Forward: 0.6 V
• Voltage, Reverse: 40 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 1N5819G; 1N5819GOS

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
*This package is inherently Pb−Free.
ORDERING INFORMATION
majority carrier conduction, it is not subject to junction
diode forward and reverse recovery transients due to
minority carrier injection and stored charge. Satisfactory
circuit analysis work may be performed by using a model
consisting of an ideal diode in parallel with a variable
capacitance. (See Figure 10.)
operation will be satisfactory up to several megahertz. For
example, relative waveform rectification efficiency is
approximately 70 percent at 2.0 MHz, e.g., the ratio of dc
power to RMS power in the load is 0.28 at this frequency,
whereas perfect rectification would yield 0.406 for sine
wave inputs. However, in contrast to ordinary junction
diodes, the loss in waveform efficiency is not indicative of
power loss: it is simply a result of reverse current flow
through the diode capacitance, which lowers the dc output
voltage.
Specifications Brochure, BRD8011/D.
1N5817
1N5817G
1N5817RL
1N5817RLG
1N5818
1N5818G
1N5818RL
1N5818RLG
1N5819
1N5819G
1N5819RL
1N5819RLG
Since current flow in a Schottky rectifier is the result of
Rectification efficiency measurements show that
NOTE 6. — HIGH FREQUENCY OPERATION
Device
1N5817, 1N5818, 1N5819
http://onsemi.com
Axial Lead*
Axial Lead*
Axial Lead*
Axial Lead*
Axial Lead*
Axial Lead*
Axial Lead*
Axial Lead*
Axial Lead*
Axial Lead*
Axial Lead*
Axial Lead*
Package
6
200
100
70
50
30
20
10
0.4
0.6
0.8
Figure 10. Typical Capacitance
1.0
T
f = 1.0 MHz
J
V
R
1N5817
= 25°C
, REVERSE VOLTAGE (VOLTS)
1N5818
2.0
1N5819
5000 / Tape & Reel
5000 / Tape & Reel
5000 / Tape & Reel
5000 / Tape & Reel
5000 / Tape & Reel
5000 / Tape & Reel
4.0
1000 Units / Bag
1000 Units / Bag
1000 Units / Bag
1000 Units / Bag
1000 Units / Bag
1000 Units / Bag
Shipping
6.0
8.0
10
†
20
40