MUR2020RG ON Semiconductor, MUR2020RG Datasheet - Page 2

DIODE ULT FAST 20A 200V TO-220AC

MUR2020RG

Manufacturer Part Number
MUR2020RG
Description
DIODE ULT FAST 20A 200V TO-220AC
Manufacturer
ON Semiconductor
Series
SWITCHMODE™r
Datasheets

Specifications of MUR2020RG

Voltage - Forward (vf) (max) @ If
1.1V @ 20A
Voltage - Dc Reverse (vr) (max)
200V
Current - Average Rectified (io)
20A
Current - Reverse Leakage @ Vr
50µA @ 200V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
95ns
Mounting Type
Through Hole
Package / Case
TO-220-2, TO-220AC
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
200 V
Forward Voltage Drop
1.1 V
Recovery Time
95 ns
Forward Continuous Current
20 A
Max Surge Current
250 A
Reverse Current Ir
50 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Current, Forward
20 A
Current, Reverse
0.225 mA
Current, Surge
250 A
Package Type
TO-220
Primary Type
Rectifier
Resistance, Thermal, Junction To Case
2 °C/W
Speed, Switching
Ultrafast
Temperature, Junction, Maximum
+175 °C
Temperature, Operating
-65 to +175 °C
Time, Recovery
95 ns
Voltage, Forward
0.97 V
Voltage, Reverse
200 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MUR2020RG
MUR2020RGOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MUR2020RG
Manufacturer:
ON Semiconductor
Quantity:
1 931
Part Number:
MUR2020RG
Manufacturer:
ON
Quantity:
12 500
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Voltage,
(Rated V
Peak Repetitive Forward Current
(Rated V
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Operating Junction Temperature and Storage Temperature Range
Maximum Thermal Resistance, Junction−to−Case
Maximum Thermal Resistance, Junction−to−Ambient
Instantaneous Forward Voltage (Note 1)
Instantaneous Reverse Current (Note 1)
Maximum Reverse Recovery Time
(i
(i
(Rated dc Voltage, Tj = 25°C)
(Rated dc Voltage, Tj = 150°C)
(I
(I
40
30
20
10
F
F
F
F
0
= 20 Amps, T
= 20 Amps, Tj = 150°C)
= 1.0 Amps, di/dt = 50 A/ms)
= 1.0 Amps, di/dt = 100 A/ms)
0
R
R
), T
), T
C
C
= 125°C
= 125°C
j
T
Figure 1. Current Derating
50
= 25°C)
C
, CASE TEMPERATURE (°C)
(Per Leg)
Square Wave
Characteristic
Characteristic
dc
100
Rating
150
T
J
= 175°C
http://onsemi.com
MUR2020R
200
2
20
15
10
Min. Pad
Min. Pad
Symbol
5
0
0
v
i
t
Conditions
R
rr
F
T
I
J
F(AV)
= 175°C
, AVERAGE FORWARD CURRENT (AMPS)
5
Min
Figure 2. Power Dissipation
Square Wave
Symbol
Symbol
10
Typical
T
V
V
0.225
I
R
R
I
I
J
0.97
0.79
F(AV)
FRM
RWM
FSM
0.1
RRM
V
, T
qJC
qJA
R
stg
15
−65 to +175
dc
Value
Max
Max
200
250
2.0
1.1
1.0
1.0
20
40
70
50
95
75
20
°C/W
Unit
Unit
Unit
mA
mA
°C
ns
V
A
A
A
V
25

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