ES1C-E3/5AT Vishay, ES1C-E3/5AT Datasheet - Page 2

• Manufacturer Part Number: ES1C-E3/5AT
• Description: DIODE 1A 150V 15NS DO-214AC
• Manufacturer: Vishay

Specifications of ES1C-E3/5AT

• Diode Type: Standard
• Voltage - Forward (vf) (max) @ If: 920mV @ 1A
• Voltage - Dc Reverse (vr) (max): 150V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 5µA @ 150V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Repetitive Reverse Voltage Vrrm Max: 150V
• Forward Current If(av): 1A
• Forward Voltage Vf Max: 920mV
• Reverse Recovery Time Trr Max: 15ns
• Forward Surge Current Ifsm Max: 30A
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 150 V
• Forward Voltage Drop: 0.92 V
• Recovery Time: 25 ns
• Forward Continuous Current: 1 A
• Max Surge Current: 30 A
• Reverse Current Ir: 5 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Details

Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
Note:
(1) Units mounted on P.C.B. 5.0 x 5.0 mm (0.013 mm thick) land areas
Note:
(1) Automotive grade AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 88586
Revision: 27-Aug-08
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Maximum instantaneous forward voltage
Maximum DC reverse current at rated
DC blocking voltage
Maximum reverse recovery time
Maximum reverse recovery time
Maximum stored charge
Typical junction capacitance
THERMAL CHARACTERISTICS (T
PARAMETER
Typical thermal resistance
ORDERING INFORMATION (Example)
PREFERRED P/N
ES1D-E3/61T
ES1D-E3/5AT
ES1DHE3/61T
ES1DHE3/5AT
A
= 25 °C unless otherwise noted)
1.2
1.0
0.8
0.6
0.4
0.2
Figure 1. Maximum Forward Current Derating Curve
0
80
Resistive or Inductive Load
0.2 x 0.2" (5.0 x 5.0 mm)
90
P.C.B. Mounted on
Copper Pad Areas
(1)
(1)
100
Lead Temperature (°C)
UNIT WEIGHT (g)
(1)
110
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For technical questions within your region, please contact one of the following:
0.064
0.064
0.064
0.064
120
130
I
I
I
I
dI/dt = 50 A/µs, I
I
dI/dt = 50 A/µs, I
4.0 V, 1 MHz
F
F
F
F
F
= 0.6 A
= 1.0 A
= 0.5 A, I
= 0.6 A, V
= 0.6 A, V
140
PREFERRED PACKAGE CODE
A
= 25 °C unless otherwise noted)
150
(1)
A
R
TEST CONDITIONS
R
R
= 25 °C unless otherwise noted)
= 1.0 A, l
= 30 V,
= 30 V,
rr
rr
=10 % I
=10 % I
61T
5AT
61T
5AT
SYMBOL
R
R
rr
θJA
θJL
= 0.25 A
RM
RM
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
T
T
T
T
T
T
A
A
J
J
J
J
ES1A
= 25 °C
= 100 °C
= 25 °C
= 100 °C
= 25 °C
= 100 °C
30
25
20
15
10
5
0
1
BASE QUANTITY
Vishay General Semiconductor
SYMBOL
1800
7500
1800
7500
ES1B
Q
V
C
I
t
t
Number of Cycles at 60 Hz
R
rr
rr
F
rr
J
85
35
8.3 ms Single Half Sine-Wave
ES1C
13" diameter plastic tape and reel
13" diameter plastic tape and reel
ES1A thru ES1D
10
7" diameter plastic tape and reel
7" diameter plastic tape and reel
VALUE
0.865
0.920
100
DELIVERY MODE
5.0
15
25
35
10
25
10
ES1D
www.vishay.com
100
UNIT
UNIT
°C/W
µA
nC
pF
ns
ns
V
651