V12P12-M3/86A Vishay, V12P12-M3/86A Datasheet

DIODE 12A 120V SCHOTTKY TO277A

V12P12-M3/86A

Manufacturer Part Number
V12P12-M3/86A
Description
DIODE 12A 120V SCHOTTKY TO277A
Manufacturer
Vishay
Series
eSMP™r
Datasheet

Specifications of V12P12-M3/86A

Voltage - Forward (vf) (max) @ If
800mV @ 12A
Voltage - Dc Reverse (vr) (max)
120V
Current - Average Rectified (io)
12A
Current - Reverse Leakage @ Vr
500µA @ 120V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
TO-277A (SMPC)
Product
Schottky Diodes
Peak Reverse Voltage
120 V
Forward Continuous Current
12 A
Max Surge Current
150 A
Configuration
Single Dual Anode
Forward Voltage Drop
0.8 V
Maximum Reverse Leakage Current
500 uA
Operating Temperature Range
- 40 C to + 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
V12P12-M3/86A
Manufacturer:
Vishay Semiconductors
Quantity:
1 979
Company:
Part Number:
V12P12-M3/86A
Quantity:
70 000
TYPICAL APPLICATIONS
For
freewheeling, dc-to-dc converters and polarity protection
applications.
Document Number: 89094
Revision: 24-Nov-09
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Non-repetitive avalanche energy at I
Peak repetitive reverse current at t
T
Operating junction and storage temperature range
J
= 38 °C ± 2 °C
use
V
F
at I
T
in
V
I
J
I
F(AV)
E
FSM
RRM
F
max.
AS
= 12 A
TMBS
low
K
Cathode
voltage
TO-277A (SMPC)
®
K
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
eSMP
Trench MOS Barrier Schottky Rectifier
High Current Density Surface Mount
For technical questions within your region, please contact one of the following:
high
p
A
AS
= 2 µs, 1 kHz,
TM
Anode 1
Anode 2
= 25 °C unless otherwise noted)
= 2.0 A, L = 50 mH, T
Series
frequency
2
1
Ultra Low V
100 mJ
150 °C
0.63 V
120 V
150 A
12 A
inverters,
J
= 25 °C
F
= 0.51 V at I
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
• Halogen-free according to IEC 61249-2-21 definition
• Find out more about Vishay’s Automotive Grade Product
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free and RoHS compliant,
commercial grade
Base P/NHM3 - halogen-free and RoHS compliant,
automotive grade
Terminals:
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
SYMBOL
T
J
V
260 °C
accordance to WEEE 2002/96/EC
requirements at:
I
I
I
, T
F(AV)
E
RRM
FSM
RRM
AS
STG
F
DiodesEurope@vishay.com
= 6 A
Vishay General Semiconductor
Matte
www.vishay.com/applications
tin
- 40 to + 150
V12P12
V1212
plated
120
150
100
0.5
12
leads,
solderable
www.vishay.com
V12P12
UNIT
mJ
°C
V
A
A
A
per
1

Related parts for V12P12-M3/86A

V12P12-M3/86A Summary of contents

Page 1

... M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test SYMBOL V RRM I F(AV) I FSM = 25 ° RRM STG DiodesEurope@vishay.com V12P12 www.vishay.com/applications Matte tin plated leads, solderable V12P12 UNIT V1212 120 150 A 100 mJ 0 150 °C www.vishay.com per 1 ...

Page 2

... Pulse test: 300 µs pulse width duty cycle Pulse test: Pulse width ≤ (2) THERMAL CHARACTERISTICS (T PARAMETER Typical thermal resistance Note (1) Units mounted on recommended P.C.B. 1 oz. pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) V12P12-M3/86A 0.10 V12P12-M3/87A 0.10 (1) V12P12HM3/86A 0.10 (1) V12P12HM3/87A 0.10 Note (1) AEC-Q101 qualified www ...

Page 3

... D = 1.0 1000 T 100 / 0.1 100 10 1 0.8 0.9 1.0 0.01 Fig Typical Transient Thermal Impedance DiodesEurope@vishay.com V12P12 Vishay General Semiconductor T = 150 ° 125 ° 100 ° ° 100 Percent of Rated Peak Reverse Voltage (%) Fig Typical Reverse Characteristics ° ...

Page 4

... V12P12 Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-277A (SMPC) 0.187 (4.75) 0.175 (4.45) 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 2 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) 0.087 (2.20) 0.075 (1.90) 0.189 (4.80) 0.173 (4.40) 0.155 (3.94) NOM ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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