V12P12-M3/86A Vishay, V12P12-M3/86A Datasheet - Page 3

• Manufacturer Part Number: V12P12-M3/86A
• Description: DIODE 12A 120V SCHOTTKY TO277A
• Manufacturer: Vishay
• Series: eSMP™r

Specifications of V12P12-M3/86A

• Voltage - Forward (vf) (max) @ If: 800mV @ 12A
• Voltage - Dc Reverse (vr) (max): 120V
• Current - Average Rectified (io): 12A
• Current - Reverse Leakage @ Vr: 500µA @ 120V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: TO-277A (SMPC)
• Product: Schottky Diodes
• Peak Reverse Voltage: 120 V
• Forward Continuous Current: 12 A
• Max Surge Current: 150 A
• Configuration: Single Dual Anode
• Forward Voltage Drop: 0.8 V
• Maximum Reverse Leakage Current: 500 uA
• Operating Temperature Range: - 40 C to + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 89094
Revision: 24-Nov-09
A
= 25 °C unless otherwise noted)
100
0.01
Fig. 3 - Typical Instantaneous Forward Characteristics
0.1
14
12
10
11
10
10
8
6
4
2
0
Fig. 1 - Maximum Forward Current Derating Curve
9
8
7
6
5
4
3
2
1
0
1
100
0
0
Fig. 2 - Forward Power Loss Characteristics
T
at the Cathode Band Terminal
L
Resistive or Inductive Load
0.1
Measured
T
2
A
Instantaneous Forward Voltage (V)
110
= 125 °C
0.2
D = 0.1
Average Forward Current (A)
Lead Temperature (°C)
0.3
4
D = 0.2
120
0.4
T
[e-mail], [e-mail],
A
6
D = 0.3
T
= 150 °C
A
0.5
For technical questions within your region, please contact one of the following:
T
= 25 °C
A
= 100 °C
8
130
0.6
D = 0.5 D = 0.8
D = t
0.7
10
p
/T
140
0.8
T
12
D = 1.0
t
p
0.9
150
1.0
14
10 000
0.001
1000
0.01
100
100
100
0.1
10
10
10
1
1
0.01
0.1
10
[e-mail]
Fig. 6 - Typical Transient Thermal Impedance
Vishay General Semiconductor
Percent of Rated Peak Reverse Voltage (%)
Junction to Ambient
Fig. 4 - Typical Reverse Characteristics
20
Fig. 5 - Typical Junction Capacitance
T
30
A
0.1
= 25 °C
T
A
t - Pulse Duration (s)
Reverse Voltage (V)
40
= 150 °C
1
T
T
A
A
50
= 125 °C
= 100 °C
1
60
70
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
80
= 50 mVp-p
90
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V12P12
100
100
100
3