MBR10100-E3/4W Vishay, MBR10100-E3/4W Datasheet

DIODE SCHOTT 10A 100V SGL TO220

MBR10100-E3/4W

Manufacturer Part Number
MBR10100-E3/4W
Description
DIODE SCHOTT 10A 100V SGL TO220
Manufacturer
Vishay
Datasheet

Specifications of MBR10100-E3/4W

Diode Type
Schottky
Voltage - Forward (vf) (max) @ If
800mV @ 10A
Voltage - Dc Reverse (vr) (max)
100V
Current - Average Rectified (io)
10A
Current - Reverse Leakage @ Vr
100µA @ 100V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Product
Schottky Diodes
Peak Reverse Voltage
100 V
Forward Continuous Current
10 A
Max Surge Current
150 A
Configuration
Single
Forward Voltage Drop
0.8 V
Maximum Reverse Leakage Current
100 uA
Operating Temperature Range
- 65 C to + 150 C
Mounting Style
Through Hole
Repetitive Reverse Voltage Vrrm Max
100V
Forward Current If(av)
10A
Forward Voltage Vf Max
650mV
Forward Surge Current Ifsm Max
150A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MBR10100-E3/4W
Manufacturer:
VISHAY
Quantity:
1 000
Company:
Part Number:
MBR10100-E3/4W
Quantity:
4 000
Document Number: 89034
Revision: 24-Jun-09
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Non-repetitive avalanche energy at T
Peak repetitive reverse current
at t
Voltage rate of change (rated V
Isolation voltage (ITO-220AC only)
From terminal to heatsink t = 1 min
Operating junction and storage temperature range
p
= 2 µs, 1 kHz, T
MBR1090
MBR10100
PIN 2
PIN 1
TO-220AC
T
V
I
J
I
F(AV)
FSM
RRM
V
max.
F
CASE
J
= 38 °C ± 2 °C
PIN 2
K
PIN 1
1
MBRB1090
MBRB10100
TO-263AB
TMBS
PDD-Americas@vishay.com, PDD-Asia@vishay.com,
For technical questions within your region, please contact one of the following:
2
R
)
C
High-Voltage Schottky Rectifier
®
J
1
= 25 °C unless otherwise noted)
= 25 °C, L = 60 mH
2
HEATSINK
ITO-220AC
MBRF1090
MBRF10100
PIN 1
PIN 2
K
90 V, 100 V
150 °C
0.65 V
150 A
10 A
C
= 133 °C
1
New Product
2
SYMBOL
T
V
J
V
I
dV/dt
I
I
V
, T
F(AV)
E
V
RRM
FSM
MBR(F,B)1090 & MBR(F,B)10100
RWM
RRM
DC
AS
AC
FEATURES
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power
converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
STG
• Trench MOS Schottky technology
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum
• Solder bath temperature 275 °C maximum, 10 s,
• Compliant to RoHS directive 2002/95/EC and in
peak of 245 °C (for TO-263AB package)
per JESD 22-B106 (for TO-220AC and ITO-220AC
package)
accordance to WEEE 2002/96/EC
PDD-Europe@vishay.com
supplies,
Vishay General Semiconductor
MBR1090
90
90
90
- 65 to + 150
freewheeling
10 000
1500
150
130
0.5
10
MBR10100
100
100
100
diodes,
www.vishay.com
UNIT
V/µs
dc-to-dc
mJ
°C
V
V
V
A
A
A
V
1

Related parts for MBR10100-E3/4W

MBR10100-E3/4W Summary of contents

Page 1

... E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked 150 °C Mounting Torque: 10 in-lbs maximum SYMBOL V RRM V RWM 133 ° F(AV) I FSM RRM dV/ STG PDD-Europe@vishay.com Vishay General Semiconductor freewheeling diodes, MBR1090 MBR10100 90 100 90 100 90 100 10 150 130 0.5 10 000 1500 - 150 www.vishay.com dc-to-dc UNIT V/µs V °C 1 ...

Page 2

... Pulse test: 300 µs pulse width duty cycle Pulse test: Pulse width ≤ (2) THERMAL CHARACTERISTICS (T PARAMETER Typical thermal resistance ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N TO-220AC MBR10100-E3/4W ITO-220AC MBRF10100-E3/4W TO-263AB MBRB10100-E3/4W TO-263AB MBRB10100-E3/8W RATINGS AND CHARACTERISTICS CURVES ( °C unless otherwise noted) ...

Page 3

... Figure 6. Typical Transient Thermal Impedance 10 1 0.1 0.01 0.001 80 90 100 0.1 Figure 7. Typical Transient Thermal Impedance = 25 ° mVp-p 100 PDD-Europe@vishay.com Vishay General Semiconductor Junction to Case MBR(B) 0 100 t - Pulse Duration (s) Junction to Case MBRF 1 10 100 t - Pulse Duration (s) www.vishay.com 3 ...

Page 4

... MBR(F,B)1090 & MBR(F,B)10100 Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AC 0.415 (10.54)MAX. 0.154 (3.91) DIA. 0.370 (9.40) 0.148 (3.74) 0.360 (9.14) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.350 (8.89) 0.635 (16.13) 0.330 (8.38) 0.625 (15.87) PIN 1 2 1.148 (29.16) 1 ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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