MBR10100-E3/4W Vishay, MBR10100-E3/4W Datasheet - Page 3

DIODE SCHOTT 10A 100V SGL TO220

MBR10100-E3/4W

Manufacturer Part Number
MBR10100-E3/4W
Description
DIODE SCHOTT 10A 100V SGL TO220
Manufacturer
Vishay
Datasheet

Specifications of MBR10100-E3/4W

Diode Type
Schottky
Voltage - Forward (vf) (max) @ If
800mV @ 10A
Voltage - Dc Reverse (vr) (max)
100V
Current - Average Rectified (io)
10A
Current - Reverse Leakage @ Vr
100µA @ 100V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Product
Schottky Diodes
Peak Reverse Voltage
100 V
Forward Continuous Current
10 A
Max Surge Current
150 A
Configuration
Single
Forward Voltage Drop
0.8 V
Maximum Reverse Leakage Current
100 uA
Operating Temperature Range
- 65 C to + 150 C
Mounting Style
Through Hole
Repetitive Reverse Voltage Vrrm Max
100V
Forward Current If(av)
10A
Forward Voltage Vf Max
650mV
Forward Surge Current Ifsm Max
150A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MBR10100-E3/4W
Quantity:
4 000
Document Number: 89034
Revision: 24-Jun-09
10 000
0.001
Figure 3. Typical Instantaneous Forward Characteristics
1000
0.01
0.01
100
100
100
0.1
0.1
10
10
10
1
1
10
0
1
Figure 4. Typical Reverse Characteristics
Percent of Rated Peak Reverse Voltage (%)
Figure 5. Typical Junction Capacitance
0.1
T
20
J
= 125 °C
Instantaneous Forward Voltage (V)
0.2
30
0.3
Reverse Voltage (V)
40
T
T
J
0.4
J
= 150 °C
= 25 °C
50
PDD-Americas@vishay.com, PDD-Asia@vishay.com,
0.5
For technical questions within your region, please contact one of the following:
10
T
T
T
J
J
J
60
= 150 °C
= 125 °C
= 25 °C
0.6
70
0.7
T
f = 1.0 MHz
V
J
sig
= 25 °C
80
= 50 mVp-p
0.8
90
0.9
100
100
1.0
New Product
MBR(F,B)1090 & MBR(F,B)10100
0.001
0.01
100
0.1
0.1
10
10
1
1
0.01
0.1
Figure 6. Typical Transient Thermal Impedance
Figure 7. Typical Transient Thermal Impedance
PDD-Europe@vishay.com
Vishay General Semiconductor
0.1
t - Pulse Duration (s)
t - Pulse Duration (s)
1
1
Junction to Case
Junction to Case
10
10
MBRF
MBR(B)
www.vishay.com
100
100
3

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