MBR120ESFT3G ON Semiconductor, MBR120ESFT3G Datasheet - Page 3

• Manufacturer Part Number: MBR120ESFT3G
• Description: DIODE SCHOTTKY 1A 20V SOD-123FL
• Manufacturer: ON Semiconductor

Specifications of MBR120ESFT3G

• Voltage - Forward (vf) (max) @ If: 530mV @ 1A
• Voltage - Dc Reverse (vr) (max): 20V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 10µA @ 20V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: SOD-123 Flat Leads
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -

100E−3
100E−6
100E−9
10E−3
10E−6
10E−9
1.0
0.1
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
10
1E−3
1E−6
0
0.2
25
v
0
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
45
Figure 1. Typical Forward Voltage
T
J
Figure 3. Typical Reverse Current
= 100°C
T
Figure 5. Current Derating
V
L
R
65
, LEAD TEMPERATURE (°C)
T
5.0
, REVERSE VOLTAGE (VOLTS)
J
0.4
= 150°C
85
T
T
T
J
J
J
I
I
= 150°C
SQUARE
I
= 100°C
pk
= 25°C
I
pk
pk
pk
WAVE
10
/I
/I
/I
/I
105
o
o
o
o
= 20
= 10
= p
= 5
dc
0.6
T
J
125
= −40°C
freq = 20 kHz
15
T
J
145
= 25°C
http://onsemi.com
MBR120ESFT1
0.8
165
20
3
100E−3
100E−6
100E−9
10E−9
10E−3
10E−6
1E−3
1E−6
1.0
0.1
0.7
0.6
0.5
0.4
0.3
0.2
0.1
10
0
0.2
0
0
V
F
I
, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE
pk
/I
0.2
I
O
o
Figure 6. Forward Power Dissipation
T
Figure 2. Maximum Forward Voltage
, AVERAGE FORWARD CURRENT (AMPS)
= 20
Figure 4. Maximum Reverse Current
J
I
pk
= 100°C
/I
V
o
0.4
R
5.0
= 10
, REVERSE VOLTAGE (VOLTS)
0.4
I
pk
0.6
/I
o
T
= 5
(VOLTS)
J
T
T
T
I
= 150°C
J
J
pk
J
0.8
= 150°C
= 100°C
= 25°C
10
/I
o
T
= p
J
= 25°C
1.0
SQUARE
0.6
WAVE
1.2
15
1.4
dc
0.8
1.6
20