MBR120ESFT3G ON Semiconductor, MBR120ESFT3G Datasheet - Page 4

• Manufacturer Part Number: MBR120ESFT3G
• Description: DIODE SCHOTTKY 1A 20V SOD-123FL
• Manufacturer: ON Semiconductor

Specifications of MBR120ESFT3G

• Voltage - Forward (vf) (max) @ If: 530mV @ 1A
• Voltage - Dc Reverse (vr) (max): 20V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 10µA @ 20V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: SOD-123 Flat Leads
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -

1000
100
1000
10
100
0.1
10
1
0
0.000001
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of T
T
This graph displays the derated allowable T
where r(t) = Rthja. For other power applications further calculations must be performed.
J
may be calculated from the equation:
2.0
4.0
V
0.00001
R
, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
6.0
0.05
0.01
D = 0.5
0.2
0.1
SINGLE PULSE
8.0
0.0001
10
12
T
14
J
0.001
= 25°C
J
J
Figure 9. Thermal Response
therefore must include forward and reverse power effects. The allowable operating
due to reverse bias under DC conditions only and is calculated as T
16
Test Type > Min Pad < Die Size 38x38 @ 75% mils
T
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
J
= T
http://onsemi.com
MBR120ESFT1
18
Jmax
t
1
0.01
, TIME (sec)
20
− r(t)(Pf + Pr) where
4
155
153
151
149
147
145
143
141
139
137
135
0.1
0
2.0
Figure 8. Typical Operating Temperature
V
4.0
R
, DC REVERSE VOLTAGE (VOLTS)
1
6.0
8.0
Derating*
235°C/W
10
10
324.9°C/W
P
DUTY CYCLE, D = t
(pk)
12
qJA = 321.8 °C/W
R
qJA
J
14
= T
100
t
1
= 25.6°C/W
Jmax
t
2
16
130°C/W
400°C/W
− r(t)Pr,
1
/t
18
2
1000
20