MURS210T3G ON Semiconductor, MURS210T3G Datasheet - Page 2

• Manufacturer Part Number: MURS210T3G
• Description: DIODE ULTRA FAST 2A 100V SMB
• Manufacturer: ON Semiconductor

Specifications of MURS210T3G

• Voltage - Forward (vf) (max) @ If: 940mV @ 2A
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 2A
• Current - Reverse Leakage @ Vr: 2µA @ 100V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 1)
Maximum Instantaneous Reverse Current (Note 1)
Maximum Reverse Recovery Time
Maximum Forward Recovery Time
0.07
0.05
0.03
0.02
0.01
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
(i
(i
(Rated dc Voltage, T
(Rated dc Voltage, T
(i
(i
(i
10
F
F
F
F
F
0.3
= 2.0 A, T
= 2.0 A, T
= 1.0 A, di/dt = 50 A/ms)
= 0.5 A, i
= 1.0 A, di/dt = 100 A/ms, Rec. to 1.0 V)
0.4
v
R
F,
J
J
Figure 1. Typical Forward Voltage
= 1.0 A, I
INSTANTANEOUS VOLTAGE (VOLTS)
= 25°C)
= 150°C)
0.5
J
J
= 25°C)
= 150°C)
175°C
R
0.6
to 0.25 A)
0.7
Characteristic
0.8
25°C
MURS205T3, MURS210T3
0.9
100°C
1
http://onsemi.com
1.1
2
0.07
0.05
0.03
0.02
0.01
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
10
0.3
0.4
v
F,
Figure 2. Maximum Forward Voltage
INSTANTANEOUS VOLTAGE (VOLTS)
0.5
0.6
Symbol
v
i
t
t
175°C
R
rr
fr
F
0.7
0.8
T
C
= 25°C
Value
0.94
0.74
2.0
50
30
20
20
0.9
100°C
1
Unit
mA
ns
ns
V
1.1