MURS210T3G ON Semiconductor, MURS210T3G Datasheet - Page 3

• Manufacturer Part Number: MURS210T3G
• Description: DIODE ULTRA FAST 2A 100V SMB
• Manufacturer: ON Semiconductor

Specifications of MURS210T3G

• Voltage - Forward (vf) (max) @ If: 940mV @ 2A
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 2A
• Current - Reverse Leakage @ Vr: 2µA @ 100V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -

0.01
100
0.1
10
50
45
40
35
30
25
20
15
10
10
1
5
0
9
8
7
6
5
4
3
2
1
0
80
0
0
* The curves shown are typical for the highest voltage
device in the voltage grouping. Typical reverse current
for lower voltage selections can be estimated from these
same curves if applied V
90
4
Figure 3. Typical Reverse Current*
Figure 7. Current Derating, Case
SQUARE WAVE
100
20
8
V
V
Figure 5. Typical Capacitance
R
R
T
, REVERSE VOLTAGE (VOLTS)
, REVERSE VOLTAGE (VOLTS)
C
110
dc
, CASE TEMPERATURE (°C)
12
120
16
40
T
T
T
J
J
J
R
= 175°C
= 100°C
RATED VOLTAGE APPLIED
= 25°C
130
is sufficiently below rated V
20
140
R
24
60
CAPACITANCE AT
qJC
T
NOTE: TYPICAL
J
= 175°C
0 V = 44 V
= 13°C/W
150
28
MURS205T3, MURS210T3
160
32
80
http://onsemi.com
170
36
R
100
180
.
40
3
0.01
100
0.1
3.5
2.5
1.5
0.5
10
50
45
40
35
30
25
20
15
10
1
4
3
2
1
0
5
0
0
0
0
I
4
Figure 4. Maximum Reverse Current*
F(AV)
T
J
= 175°C
20
Figure 6. Maximum Capacitance
0.5
V
, AVERAGE FORWARD CURRENT (AMPS)
8
V
R
Figure 8. Power Dissipation
R
, REVERSE VOLTAGE (VOLTS)
, REVERSE VOLTAGE (VOLTS)
12
T
T
T
J
J
J
= 175°C
= 100°C
40
16
= 25°C
1
SQUARE WAVE
20
60
1.5
24
CAPACITANCE AT
NOTE: MAXIMUM
0 V = 47 V
dc
28
80
32
2
36
100
2.5
40