IRG4PH40UDPBF International Rectifier, IRG4PH40UDPBF Datasheet
IRG4PH40UDPBF
Manufacturer Part Number
IRG4PH40UDPBF
Description
IGBT W/DIODE 1200V 30A TO247AC
Manufacturer
International Rectifier
Type
Ultrafastr
Datasheets
1.IRG4PH40UDPBF.pdf
(11 pages)
2.IRG4PH40UDPBF.pdf
(3 pages)
3.IRG4PH40UDPBF.pdf
(11 pages)
Specifications of IRG4PH40UDPBF
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.1V @ 15V, 21A
Current - Collector (ic) (max)
41A
Power - Max
160W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AC
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Capacitance, Gate
1800 pF
Current, Collector
41 A
Energy Rating
3.73 mJ
Polarity
N-Channel
Power Dissipation
160 W
Resistance, Thermal, Junction To Case
0.77 °C/W
Speed, Switching
40 kHz (Hard Switching), >200 kHz (Resonant Mode)
Voltage, Collector To Emitter Shorted
1200 V
Voltage, Collector To Emitter, Saturation
2.97 V
Transistor Type
IGBT
Dc Collector Current
41A
Collector Emitter Voltage Vces
1.2kV
Power Dissipation Pd
160W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant
Other names
*IRG4PH40UDPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRG4PH40UDPBF
Manufacturer:
NXP
Quantity:
3 000
Thermal Resistance
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Benefits
• Higher switching frequency capability than
• Highest efficiency available
• HEXFRED diodes optimized for performance with
Absolute Maximum Ratings
• UltraFast: Optimized for high operating
• New IGBT design provides tighter
• IGBT co-packaged with HEXFRED
• Industry standard TO-247AC package
• Lead-Free
R
R
R
R
Wt
V
I
I
I
I
I
I
V
P
P
T
T
competitive IGBTs
IGBT's . Minimized recovery characteristics require
parameter distribution and higher efficiency than
previous generations
C
C
CM
LM
F
FM
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
STG
θJC
θJC
θCS
θJA
frequencies up to 40 kHz in hard switching,
>200 kHz in resonant mode
CES
GE
D
D
J
@ T
@ T
@ T
less/no snubbing
@ T
@ T
C
C
C
C
C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Parameter
Parameter
TM
ultrafast,
IRG4PH40UDPbF
G
n-ch an nel
Min.
300 (0.063 in. (1.6mm) from case )
–––
–––
–––
–––
–––
C
E
10 lbf•in (1.1N•m)
-55 to + 150
UltraFast CoPack IGBT
TO-247AC
6 (0.21)
Max.
1200
± 20
130
160
8.0
Typ.
41
21
82
82
65
0.24
–––
–––
–––
@V
V
CE(on) typ.
V
GE
CES
= 15V, I
Max.
0.77
–––
–––
1.7
= 1200V
40
PD- 95188
= 2.43V
C
= 21A
Units
Units
g (oz)
°C/W
°C
V
A
W
V
1
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IRG4PH40UDPBF Summary of contents
Page 1
... R Junction-to-Case - Diode θJC R Case-to-Sink, flat, greased surface θCS R Junction-to-Ambient, typical socket mount θJA Wt Weight IRG4PH40UDPbF G TM ultrafast, n-ch an nel 300 (0.063 in. (1.6mm) from case ) Min. ––– ––– ––– ––– ––– ...
Page 2
... IRG4PH40UDPbF Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown VoltageS (BR)CES ∆V Temperature Coeff. of Breakdown Voltage /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage GE(th Forward Transconductance Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop ...
Page 3
... IRG4PH40UDPbF Notes: Q Repetitive rating: V =20V; pulse width limited by maximum junction temperature GE (figure 20 =80%( =20V, L=10µ CES GE S Pulse width ≤ 80µs; duty factor ≤ 0.1%. T Pulse width 5.0µs, single shot. TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information ...