IRG4PH40UDPBF International Rectifier, IRG4PH40UDPBF Datasheet
Home Discrete Semiconductor Products IGBTs - Single IRG4PH40UDPBF
Manufacturer Part Number
IRG4PH40UDPBF
Description
IGBT W/DIODE 1200V 30A TO247AC
Manufacturer
International Rectifier
Specifications of IRG4PH40UDPBF
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.1V @ 15V, 21A
Current - Collector (ic) (max)
41A
Power - Max
160W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AC
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Capacitance, Gate
1800 pF
Current, Collector
41 A
Energy Rating
3.73 mJ
Polarity
N-Channel
Power Dissipation
160 W
Resistance, Thermal, Junction To Case
0.77 °C/W
Speed, Switching
40 kHz (Hard Switching), >200 kHz (Resonant Mode)
Voltage, Collector To Emitter Shorted
1200 V
Voltage, Collector To Emitter, Saturation
2.97 V
Transistor Type
IGBT
Dc Collector Current
41A
Collector Emitter Voltage Vces
1.2kV
Power Dissipation Pd
160W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant
Other names
*IRG4PH40UDPBF
Available stocks
Part Number:
IRG4PH40UDPBF
Features
www.irf.com
θ
θ
θ
θ
TM
G
n-channel
C
E
TO-247AC
CE(on) typ.
GE
CES
=
C
1
Related parts for IRG4PH40UDPBF
IRG4PH40UDPBF Summary of contents
Features θ θ θ θ www.irf.com G TM n-channel C CES = CE(on) typ TO-247AC 1 ...
J ∆ ∆ J Ω Ω www.irf.com ...
Square wave: 60% of rated voltage Ideal diodes 0 0.1 100 T = 150 20µs PULSE WIDTH Collector-to-Emitter ...
T , Case Temperature ( 0.50 0.20 0.1 0.10 0.05 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 4 4 15V GE 80 ...
1MHz ies res oes ce gc 3000 C ies 2000 C oes 1000 C res 0 ...
R = Ohm 150 C ° 800V 15V Collector-to-emitter Current (A) C 100 1000 ...
V = 200V 125° 25°C J 160 I = 16A F 120 100 di /dt - (A/µs) f 600 V = 200V 125°C J ...
Same type device as D.U.T. 430µF 80% of Vce D.U. off(diode d(on) GATE VOLTAGE D.U.T. 10% +Vg +Vg Vce 10% Ic Vcc 90 Vce td(on d(on +Vge 10% ...
Figure 18e. Macro Waveforms for L 1000V 50V 6000µF 100V Figure 19. Clamped Inductive Load Test Circuit www.irf.com Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT Figure 18a's D.U. ...
Notes: Repetitive rating: V =20V; pulse width limited by maximum junction temperature GE (figure 20) V =80%( =20V, L=10µ CES GE Pulse width ≤ 80µs; duty factor ≤ 0.1%. Pulse width 5.0µs, ...
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...
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