IRG4PH40UDPBF International Rectifier, IRG4PH40UDPBF Datasheet - Page 5

IGBT W/DIODE 1200V 30A TO247AC

IRG4PH40UDPBF

Manufacturer Part Number
IRG4PH40UDPBF
Description
IGBT W/DIODE 1200V 30A TO247AC
Manufacturer
International Rectifier
Type
Ultrafastr

Specifications of IRG4PH40UDPBF

Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.1V @ 15V, 21A
Current - Collector (ic) (max)
41A
Power - Max
160W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AC
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Capacitance, Gate
1800 pF
Current, Collector
41 A
Energy Rating
3.73 mJ
Polarity
N-Channel
Power Dissipation
160 W
Resistance, Thermal, Junction To Case
0.77 °C/W
Speed, Switching
40 kHz (Hard Switching), >200 kHz (Resonant Mode)
Voltage, Collector To Emitter Shorted
1200 V
Voltage, Collector To Emitter, Saturation
2.97 V
Transistor Type
IGBT
Dc Collector Current
41A
Collector Emitter Voltage Vces
1.2kV
Power Dissipation Pd
160W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant
Other names
*IRG4PH40UDPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG4PH40UDPBF
Manufacturer:
NXP
Quantity:
3 000
www.irf.com
5.0
4.5
4.0
3.5
3.0
4000
3000
2000
1000
0
0
V
V
T
I
J
C
CC
GE
1
= 800V
= 15V
= 25 C
= 21A
R
10
V
G
CE
°
, Gate Resistance (Ohm)
V
C
C
C
, Collector-to-Emitter Voltage (V)
GE
ies
res
oes
C res
C ies
C oes
=
=
=
=
20
0V,
C
C
C
ge
gc
ce
+ C
+ C
10
f = 1MHz
gc ,
gc
30
Ω )
C
ce
40
SHORTED
50
100
100
10
1
20
16
12
-60 -40 -20
8
4
0
R
V
V
0
GE
CC
V
G
I
CC
C
= 15V
= 800V
= Ohm
= 400V
= 21A
T , Junction Temperature ( C )
J
20
Q , Total Gate Charge (nC)
G
0
20 40 60 80 100 120 140 160
40
60
I =
I =
I =
C
C
C
°
80
10.5
42
21
A
A
A
100
5

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