IRGPS40B120UPBF International Rectifier, IRGPS40B120UPBF Datasheet - Page 2

• Manufacturer Part Number: IRGPS40B120UPBF
• Description: IGBT ULT FAST 1200V 80A SUPER247
• Manufacturer: International Rectifier

Specifications of IRGPS40B120UPBF

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.71V @ 15V, 50A
• Current - Collector (ic) (max): 80A
• Power - Max: 595W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: Super-247-3 (Straight Leads)
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 80A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Transistor Type: IGBT
• Dc Collector Current: 80A
• Collector Emitter Voltage Vces: 3.5V
• Power Dissipation Pd: 595W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: TO-274AA
• No. Of Pins: 3
• Rohs Compliant: Yes
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRGPS40B120UPBF

Electrical Characteristics @ T
IRGPS40B120UP
Switching Characteristics @ T
SCSOA
V
∆V
V
V
∆
g
I
I
RBSOA
Note:

Qg
Qge
Q
E
E
E
E
E
E
t
t
t
t
C
C
C
CES
GES
d(on)
r
d(off)
f
V
fe
(BR)CES
CE(on)
GE(th)
on
off
tot
on
off
tot
ies
oes
res
gc
2
(BR)CES
GE(th)
V
CC
/
= 80% (V
∆
/∆T
T
J
J
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage –––
Forward Transconductance
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Short Circuit Safe Operting Area
Reverse Bias Safe Operting Area
CES
), V
Parameter
Parameter
GE
= 20V, L = 100µH, R
J
J
= 25°C (unless otherwise specified)
G
= 25°C (unless otherwise specified)
= 4.7Ω.
1200 –––
Min. Typ. Max. Units
Min. Typ. Max. Units
––– 0.40 –––
––– 3.12 3.40
––– 3.39 3.71
––– 3.88 4.39
––– 4.24 4.79
––– 30.5 –––
–––
–––
–––
–––
–––
–––
––– 1400 1750
––– 1650 2050
––– 3050 3800
––– 1950 2300
––– 2200 2950
––– 4150 5250
–––
–––
–––
–––
––– 4300 –––
–––
–––
4.0
10
FULL SQUARE
–––
100 1200
––– ±100
340
165
332
270
160
5.0
-12
–––
43
76
39
25
–––
––– mV/°C V
500
510
248
365
–––
–––
6.0
–––
65
99
55
33
V/°C
µA
nA
nC
V
V
S
pF
µJ
µJ
ns
µs
V
V
V
I
I
I
I
V
V
V
V
V
I
V
V
I
V
Ls = 150nH
Energy losses include "tail" and
diode reverse recovery.
I
V
Ls = 150nH, T
V
V
f = 1.0MHz
T
V
R
T
R
C
C
C
C
C
C
C
CC
GE
GE
CE
CE
CE
GE
GE
GE
J
J
CC
GE
GE
GE
GE
CC
CC
G
G
= 40A
= 50A
= 40A, T
= 50A, T
= 40A
= 40A, V
= 40A, V
= 150°C, I
= 150°C, Vp =1200V
= 4.7Ω
= 4.7Ω
= 0V, I
= 0V, I
= V
= V
= 50V, I
= 0V, V
= 0V, V
= ±20V
= 900V, V
= 600V
= 15V
= 15V,R
= 15V, R
= 0V
= 30V
= 1000V, V
GE
GE
, I
, I
C
J
J
C
CC
CC
CE
CE
C
C
C
= 125°C
= 125°C
Conditions
= 500µA
Conditions
G
= 1.0mA, (25°C-125°C)
C
G
= 250µA
= 1.0mA, (25°C-125°C)
= 40A, PW=80µs
= 600V
= 600V
J
GE
= 4.7Ω, L =200µH
= 1200V
= 1200V, T
= 160A, Vp =1200V
= 4.7Ω L =200µH
= 125°C
GE
= +15V to 0V,
= +15V to 0V
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T
T
J
J
V
= 25°C
= 125°C
GE
J
= 125°C
= 15V
Ref.Fig.
Ref.Fig.
13, 15
8, 9
10 ,11
12,14
WF1
WF2
WF4
5, 6
7, 9
10
11
CT4
CT3
CT1
WF1
WF2
CT4
17
16
4