IXGH60N60C2 IXYS, IXGH60N60C2 Datasheet
IXGH60N60C2
Specifications of IXGH60N60C2
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IXGH60N60C2 Summary of contents
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... V GE(th CES CE CES ± GES CE(sat © 2003 IXYS All rights reserved Advance Technical Data IXGH 60N60C2 IXGT 60N60C2 Maximum Ratings 600 = 1 MΩ 600 GE ±20 ± 300 = 10 Ω 100 G CM ≤ 600V 480 -55 ... +150 150 -55 ... +150 300 1.13/10Nm/lb.in. TO-247 AD ...
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... R thJC R (TO-247) thCK Min. Recommended Footprint (Dimensions in inches and mm) IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. ...
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... V - Volts CE Fig. 3. Output Characteristics @ 125 Deg 0 Volts CE Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter voltage 5 4.5 4 3 00A Volts GE © 2003 IXYS All rights reserved 200 2 0.9 0.8 5V 0.7 0.6 0.5 2.5 3 3.5 25 200 º 50A 25 25A 3.5 IXGH 60N60C2 IXGT 60N60C2 Fig ...
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... I - Amperes C Fig. 11. Gate Charge 300V 50A 0mA nanoCoulombs G IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents 200 on I off C º º 0000 1 000 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 ...
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... IXYS All rights reserved 13. M aximu m Tran sien t Th ermal R esistan ce 10 Puls e W idth - millis ec onds IXGH 60N60C2 IXGT 60N60C2 ...