IXGH 28N120BD1SN IXYS, IXGH 28N120BD1SN Datasheet
IXGH 28N120BD1SN
Specifications of IXGH 28N120BD1SN
Related parts for IXGH 28N120BD1SN
IXGH 28N120BD1SN Summary of contents
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... GE(th CES CE CES 0V ±20V GES 28A 15V, Note 2 CE(sat © 2009 IXYS CORPORATION, All Rights Reserved IXGH28N120BD1 IXGT28N120BD1 Maximum Ratings 1200 = 1MΩ 1200 GE ±20 ± 150 = 5Ω 120 G CM 0.8 • V CES 250 -55 ... +150 150 -55 ... +150 300 260 1.13/10 6 ...
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... Part must be heatsunk for high-temp I 2. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 3. Switching times & energy loses may increase for higher V IXYS reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U ...
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... V - Volts CE Fig. 5. Colle ctor-to-Em itter Voltage vs. Gate-to-Em itte r voltage 56A C 28A 14A Volts G E © 2009 IXYS CORPORATION, All Rights Reserved º 3.5 4 4.5 5 º C 13V 11V 3.5 4 4.5 5 º IXGH28N120BD1 IXGT28N120BD1 Fig. 2. Exte nde d Output Characte ris tics º ...
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... C Fig. 11. Dependence of Turn-off Sw itching Tim 1400 t d(off) 1200 125ºC J 1000 V = 15V 960V CE 800 600 I = 14A C 400 200 Ohms G IXYS reserves the right to change limits, test conditions and dimensions 100 C º 125 C J º 56A I = 28A 100 IXGH28N120BD1 IXGT28N120BD1 Fig. 8. Dependence of Turn-off ...
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... T - Degrees Centigrade J Fig. 15. Capacitance 10000 MHz 1000 100 Volts C E 1.00 0.50 0.10 1 © 2009 IXYS CORPORATION, All Rights Reserved I = 56A 28A 14A 105 115 125 C ies C oes C res Fig. 17. Maxim um Transient Therm al Resistance 10 Pulse Width - milliseconds IXGH28N120BD1 IXGT28N120BD1 Fig. 14. Gate Charge ...
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... T VJ Fig. 21. Dynamic parameters versus K thJC 0.1 0.01 0.001 0.00001 0.0001 0.001 Fig. 24. Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions and dimensions. 2000 T = 100° 600V nC R 1500 20A 10A 1000 500 0 V 100 -di Fig ...