IXFN61N50 IXYS, IXFN61N50 Datasheet

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IXFN61N50

Manufacturer Part Number
IXFN61N50
Description
Manufacturer
IXYS
Datasheet

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High Current Power MOSFET
N-Channel Enhancement Mode
Symbol
V
V
V
V
I
I
P
T
T
T
V
M
Weight
E
I
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700
Preliminary Data Sheet
Symbol
V
V
I
I
R
©1996 IXYS Corporation. All rights reserved.
XYS reserves the right to change limits, test conditions, and dimensions.
D25
DM
GSS
DSS
J
JM
stg
DSS
DGR
ISOL
AR
GS
GSM
D
DSS
GS(th)
d
DS(on)
Test Conditions
T
T
Continuous
Transient
T
T
T
50/60 Hz, RMS
Mounting torque
Terminal connection torque (M4)
Test Conditions
V
V
V
V
V
Pulse test, t
V
J
J
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C (1)
= 25°C
= 0 V, I
= V
= 20 V DC, V
= 0.8 V
= 0 V
= 10 V, I
Fax: 408-496-0670
GS
,
I
D
D
DSS
= 12 mA
D
= 5 mA
= 0.5 I
300 µs, duty cycle
DS
D25
= 0
GS
t = 1 minute
t = 1s
T
T
J
J
= 1.0 M
= 25°C
= 125°C
(T
J
= 25°C unless otherwise specified)
2 %
IXFN 58N50
IXFN 61N50
IXFN 58N50
IXFN 61N50
58N50
61N50
Min.
500
1.7
-40 ... +150
-40 ... +150
Characteristic Values
Maximum Ratings
Typ.
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
2500
3000
500
500
232
244
625
150
20
30
58
61
30
75
200
500
4.0
2
Max.
85 m
75 m
IXFN 58N50 500V
IXFN 61N50 500V
mA
mJ
V~
V~
°C
°C
°C
nA
µA
W
V
V
V
V
A
A
A
A
V
V
g
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030
Features
• International standard package
• Isolation voltage 3000V (RMS)
• Low R
• Rugged polysilicon gate cell structure
• Low drain-to-case capacitance
• Low package inductance (< 10 nH)
• Aluminium Nitride Isolation
Applications
• DC choppers
• AC motor speed controls
• DC servo and robot drives
• Uninterruptible power supplies (UPS)
• Switched mode and resonant mode
Advantages
• Easy to mount
• Space savings
• High power density
(<60 pF)
- reduced RFI
- easy to drive and to protect
- increased current ratings
power supplies
DS (on)
IXFN 58N50
IXFN 61N50
V
1 = Source
3 = Drain
DSS
HDMOS
miniBLOC, SOT-227 B
Fax: +49-6206-503629
IXYS Semiconductor
2
58A
61A
I
TM
D25
process
92810G (10/95)
1
2 = Gate
4 = Source
85 m
75 m
3
R
l
DS(on)
4

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IXFN61N50 Summary of contents

Page 1

... 0.5 I DS(on D25 Pulse test, t 300 µs, duty cycle ©1996 IXYS Corporation. All rights reserved. XYS reserves the right to change limits, test conditions, and dimensions. I IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670 Maximum Ratings 500 = 1.0 M ...

Page 2

... DD The data supplied herein reflects the pre-production objective specification and characterization from engineering lots. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C unless otherwise specified) J Min ...

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