IXFN24N100 IXYS Corporation, IXFN24N100 Datasheet

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IXFN24N100

Manufacturer Part Number
IXFN24N100
Description
HiPerRF Power MOSFETs
Manufacturer
IXYS Corporation
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFN24N100
Manufacturer:
IXYS
Quantity:
27
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
V
M
Weight
HiPerRF
Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated, Low Q
High dV/dt, Low t
© 2002 IXYS All rights reserved
Symbol
V
V
I
I
R
DM
D25
AR
GSS
DSS
DGR
AR
AS
D
J
JM
stg
J
DSS
GS
GSM
ISOL
d
GH(th)
DSS
DS(on)
Test Conditions
Test Conditions
S
ISOL
C
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
TM
rr
DM
GS
DSS
D
D
DC
D
G
g,
DS
Low Intrinsic R
D25
GS
DD
J
J
Advance Technical Information
J
DSS
JM
g
IXFN 24N100F
min.
Characteristic Values
Maximum Ratings
typ.
S
G
max.
D
S
miniBLOC, SOT-227 B
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
l
l
l
l
l
Applications
l
l
l
l
l
Advantages
l
l
l
RF capable MOSFETs
Double metal process for low gate
resistance
Low package inductance
- easy to drive and to protect
V
I
R
t
D25
rr
DSS
DS(on)
E153432
250 ns
=
=
=
G
D = Drain
S
1000 V
0.39
D
24 A
98875 (1/02)
S

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IXFN24N100 Summary of contents

Page 1

TM HiPerRF Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Q Low Intrinsic R g, High dV/dt, Low t rr Symbol Test Conditions V DSS J V DGR GSM I D25 C I ...

Page 2

Symbol Test Conditions 0.5 • D25 C iss MHz oss rss t d(on) t ...

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