IXFN-25N90 IXYS Corporation, IXFN-25N90 Datasheet

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IXFN-25N90

Manufacturer Part Number
IXFN-25N90
Description
Hiperfettm Power Mosfets Ixfn 26n90 Single Die Mosfet Ixfn 25n90 N-channel Enhancement Mode Avalanche Rated, High Dv/dt, Low Trr
Manufacturer
IXYS Corporation
Datasheet
© 2000 IXYS All rights reserved
HiPerFET
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
Symbol
V
V
I
I
R
IXYS reserves the right to change limits, test conditions, and dimensions.
Preliminary data sheet
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
V
M
Weight
DM
AR
GSS
DSS
D25
J
JM
stg
J
DSS
DGR
GS
GSM
AR
AS
D
ISOL
DSS
GH(th)
DS(on)
d
V
V
V
V
V
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
GS
DS
GS
DS
GS
GS
Test Conditions
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.63 in) from case for 10 s
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
S
ISOL
C
C
C
C
C
C
J
J
J
= 0 V, I
= V
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
£ I
£ 150°C, R
= 25°C
= ±20 V
= 0.8 • V
= 0 V
£ 1 mA
= 10 V, I
GS
TM
DM
, I
, di/dt £ 100 A/ms, V
D
D
= 3 mA
= 8 mA
DC
Power MOSFETs
DSS
D
, V
= 0.5 • I
G
DS
= 2 W
= 0
t = 1 min
t = 1 s
D25
GS
= 1 MW
DD
T
T
J
J
£ V
(T
= 25°C
= 125°C
rr
J
DSS
= 25°C, unless otherwise specified)
JM
,
26N90
25N90
26N90
25N90
26N90
25N90
26N90
25N90
min.
900
3.0
Characteristic Values
-55 ... +150
-55 ... +150
IXFN 26N90
IXFN 25N90
Maximum Ratings
typ.
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
2500
3000
S
G
900
900
±20
±30
104
100
600
150
26
25
26
25
64
30
3
5
max.
-
±200
5.0
0.30
0.33
100
2
D
S
V/ns
mA
mJ
V~
V~
nA
mA
°C
°C
°C
°C
W
W
W
V
V
A
A
A
V
V
V
V
J
g
900 V
900 V
V
DSS
Features
Applications
Advantages
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
miniBLOC, SOT-227 B (IXFN)
International standard package
miniBLOC, with Aluminium nitride
isolation
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Easy to mount
Space savings
High power density
E153432
I
DS (on)
26 A
25 A
D (cont)
HDMOS
G
0.30 W
0.33 W
R
D = Drain
S
DS(on)
TM
process
D
97526E (10/99)
S
250 ns
250 ns
t
1 - 4
rr

IXFN-25N90 Summary of contents

Page 1

... 125° 26N90 0.30 25N90 0. DSS D (cont) DS(on) 0.30 W 900 250 ns 0.33 W 900 250 ns miniBLOC, SOT-227 B (IXFN) E153432 Gate D = Drain S = Source A Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features °C • ...

Page 2

... V 250 R 1.4 10 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 4,850,072 4,931,844 5,034,796 5,063,307 IXFN 25N90 IXFN 26N90 miniBLOC, SOT-227 screws (4x) supplied ns Dim. Millimeter Inches Min. Max. Min. Max. ...

Page 3

... Figure 4. Admittance Curves value vs. I D25 Figure 6. R value vs. I D25 D 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0 IXFN 25N90 IXFN 26N90 25° Volts 125 Volts GS normalized to 0.5 I value vs ...

Page 4

... Figure10. Drain Current vs. Case Temperature 30 IXFN26N90 25 IXFN25N90 1.2 1.5 -50 - Pulse Width - Seconds IXFN 25N90 IXFN 26N90 Ciss f = 1MHz Coss Crss Volts 100 125 150 o Case Temperatue - ...

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