IXFN200N06 IXYS Corporation, IXFN200N06 Datasheet
IXFN200N06
Manufacturer Part Number
IXFN200N06
Description
HiPerFET Power MOSFETs
Manufacturer
IXYS Corporation
Datasheet
1.IXFN200N06.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFN200N06
Manufacturer:
IR
Quantity:
2 000
HiPerFET
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
V
M
Weight
Symbol
V
V
I
I
R
© 2003 IXYS All rights reserved
L(RMS)
D25
DM
AR
GSS
DSS
DGR
GSM
J
JM
stg
DSS
GS (th)
DSS
GS
AR
AS
D
ISOL
DS(on)
d
V
V
V
T
V
Pulse test, t
V
V
T
T
Continuous
Transient
Terminal current limit
T
T
T
T
I
T
T
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
GS
S
ISOL
GS
GS
C
DS
DS
GS
J
J
C
C
C
C
C
J
= 25 C; Chip capability
= 25 C to 150 C; R
= 25 C to 150 C
= 10 V, I
Test Conditions
Test Conditions
= 0 V, I
= 0 V
= 0.8 • V
= V
= 25 C
= 20 V
= 25 C, pulse width limited by T
= 25 C
= 25 C
= 25 C
1 mA
I
150 C, R
DM
GS
, di/dt
, I
TM
D
D
D
DC
= 1 mA
DSS
= 0.5 • I
= 8 mA
300 s, duty cycle d
, V
T
G
J
DS
100 A/ s, V
= 2
= 125 C
= 0
D25
GS
t = 1 s
t = 1 min
= 1 M
DD
V
(T
T
DSS
J
200N06/200N07
N06
N07
J
2 %
rr
JM
= 25 C
= 25 C, unless otherwise specified)
,
N07
N06
min.
60
70
Characteristic Values
IXFN 200 N06
IXFN 200 N07
-
-
-
2
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
150
2
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
2500
3000
200
100
600
100
520
30
30
70
60
20
30
2
max.
5
200
400
mA
4
6 m
V/ns
mJ
V~
V~
nA
W
C
C
C
V
V
A
A
V
V
V
A
V
V
A
A
J
g
t
miniBLOC, SOT-227 B (IXFN)
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
Applications
Advantages
60 V
70 V
rr
V
International standard packages
miniBLOC with Aluminium nitride
isolation
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Easy to mount
Space savings
High power density
DSS
250 ns
E153432
DS (on)
G
200 A
200 A
HDMOS
I
D25
S
D = Drain
D
TM
DS97533B(02/03)
process
6
6
S
R
DS(on)
m
m
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IXFN200N06 Summary of contents
Page 1
HiPerFET TM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Symbol Test Conditions 150 C DSS 150 DGR J ...
Page 2
Symbol Test Conditions 0.5 • D25 C iss MHz oss rss t d(on) t ...