IXGH50N60A IXYS, IXGH50N60A Datasheet
IXGH50N60A
Specifications of IXGH50N60A
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IXGH50N60A Summary of contents
Page 1
... GE(th 0.8 • V CES CE CES GES CE(sat) C C90 GE © 1996 IXYS All rights reserved IXGH50N60A IXGH50N60AS Maximum Ratings 600 = 1 M 600 200 = 100 0.8 V CES 250 -55 ... +150 150 -55 ... +150 300 1.13/10 Nm/lb.in. TO-247 SMD 4 TO-247 AD 6 Characteristic Values ( unless otherwise specified) J min ...
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... CES 210 = R = 2.7 200 off 275 , higher CES 4 125 C J 240 2.7 G off 280 , 600 CES 9.6 G 0.25 4,835,592 4,850,072 IXGH50N60AS TO-247 AD Outline 250 nC e Dim. Millimeter 50 nC Min. Max. 100 nC A 4.7 5.3 A 2.2 2. 2.2 2 1.0 1 1.65 2. 2.87 3 ...
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... Volts GE © 1996 IXYS All rights reserved IXGH50N60A 13V 11V 40A 20A C Fig IXGH50N60AS Fig. 2 Output Characterstics 350 13V V = 15V GE 11V 300 9V 250 200 150 100 Volts CE Fig. 4 Temperature Dependence of Output Saturation Voltage 1.5 1.4 1.3 1.2 1.1 1.0 ...
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... IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: IXGH50N60A 200 250 Duty Cycle 0.001 0.01 Pulse Width - seconds G50N60 2 JNB 4,835,592 4,850,072 IXGH50N60AS Fig.8 Turn-Off Safe Operating Area 100 125°C J dV/dt < 3V/ns 1 0.1 0.01 0 100 200 ...