IRG4PSH71KDPBF International Rectifier, IRG4PSH71KDPBF Datasheet
IRG4PSH71KDPBF
Specifications of IRG4PSH71KDPBF
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IRG4PSH71KDPBF Summary of contents
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High short circuit rating IGBTs, optimized for motorcontrol • Minimum switching losses combined with low conduction ...
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IRG4PSH71KD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th) ...
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rate d 20 volta 0.1 Fig Typical Load Current vs. ...
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IRG4PSH71KD 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature .50 0 0.05 0.0 2 ...
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1MHz ies res 8000 oes ies 6000 4000 2000 C oes C res ...
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IRG4PSH71KD 5 150 C ° 800V 15V Collector Current (A) C Fig Typical Switching Losses vs. ...
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V = 200 5° ° /dt - (A/µ Fig Typical Reverse Recovery ...
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IRG4PSH71KD 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on ...
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Figure 18e. Macro Waveforms for µ Figure 19. Clamped Inductive Load Test Circuit www.irf.com ...
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IRG4PSH71KD Notes: Repetitive rating: V =20V; pulse width limited by maximum junction GE temperature (figure 20) V =80%( =20V, L=10µ CES GE Pulse width 80µs; duty factor Pulse width 5.0µs, single shot Case Outline and Dimensions ...