IRG4PSH71KDPBF International Rectifier, IRG4PSH71KDPBF Datasheet - Page 3
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IRG4PSH71KDPBF
Manufacturer Part Number
IRG4PSH71KDPBF
Description
IGBT W/DIODE 1200V 78A SUPER247
Manufacturer
International Rectifier
Specifications of IRG4PSH71KDPBF
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.9V @ 15V, 42A
Current - Collector (ic) (max)
78A
Power - Max
350W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
Super-247-3 (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
78A
Collector Emitter Voltage Vces
1.2kV
Power Dissipation Pd
350W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Other names
*IRG4PSH71KDPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRG4PSH71KDPBF
Manufacturer:
International Rectifier
Quantity:
135
Company:
Part Number:
IRG4PSH71KDPBF
Manufacturer:
SANKEN
Quantity:
4 000
www.irf.com
1000
100
10
40
30
20
10
Fig. 2 - Typical Output Characteristics
1
0
0.1
1.0
S q u a re w a v e :
V
T = 150 C
CE
J
2.0
, Collector-to-Emitter Voltage (V)
6 0% of rate d
Id e a l d io d e s
I
volta ge
°
T = 25 C
3.0
J
Fig. 1 - Typical Load Current vs. Frequency
V
80µs PULSE WIDTH
GE
°
= 15V
(Load Current = I
4.0
1
5.0
f, Frequency (KHz)
RMS
of fundamental)
1000
100
10
Fig. 3 - Typical Transfer Characteristics
1
5
T = 150 C
J
V
6
GE
10
, Gate-to-Emitter Voltage (V)
°
7
T = 25 C
IRG4PSH71KD
J
F o r b o th :
D u ty c y c le : 5 0 %
T = 1 2 5 ° C
T
G a te d riv e a s s p e c ifie d
P o w e r D is s ip a tio n =
8
J
sink
V
5µs PULSE WIDTH
= 9 0 ° C
°
CC
9
= 50V
10
58
W
3
100
11