IRG4BC20K-SPBF International Rectifier, IRG4BC20K-SPBF Datasheet - Page 2

• Manufacturer Part Number: IRG4BC20K-SPBF
• Description: IGBT N-CHAN 600V 16A D2PAK
• Manufacturer: International Rectifier

Specifications of IRG4BC20K-SPBF

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 9A
• Current - Collector (ic) (max): 16A
• Power - Max: 60W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 16A
• Gate To Emitter Voltage (max): ±20V
• Package Type: D2PAK
• Pin Count: 2 +Tab
• Mounting: Surface Mount
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Power Dissipation Pd: 60W
• Collector Emitter Voltage V(br)ceo: 600V
• Collector Emitter Saturation Voltage Vce(sat): 2.8V
• Continuous Collector Current Ic: 16A
• Current Rating: 16A
• Leaded Process Compatible: Yes
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

IRG4BC20K-S
Details of note Q through V are on the last page
Switching Characteristics @ T
Electrical Characteristics @ T
V
V
V
g
I
I
Q
Q
Q
t
t
t
t
E
E
E
t
t
t
t
t
E
E
E
E
L
C
C
C
V
CES
GES
d(on)
r
d(off)
f
sc
d(on)
r
d(off)
f
V
fe
E
(BR)CES
(BR)ECS
GE(th)
V
CE(ON)
on
off
ts
ts
on
off
ts
ies
oes
res
2
g
ge
gc
(BR)CES
GE(th)
/ T
/ T
J
J
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage T
Temperature Coeff. of Breakdown Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance U
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Collector-to-Emitter Saturation Voltage
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
600
3.0
2.9
18
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.15
0.25
0.40
0.68
0.07
0.13
0.20
0.49
2.00
2.27
3.01
2.43
150
100
190
190
450
-10
4.3
4.9
7.5
34
14
28
27
28
29
61
14
—
—
—
—
—
—
—
—
1000
±100
250
220
150
2.8
6.0
2.0
7.4
0.6
—
—
—
—
—
—
—
—
51
21
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
mV/°C V
V/°C
mJ
mJ
mJ
µA
nC
nH
nA
ns
µs
pF
V
ns
V
V
S
V
V
V
V
V
V
V
V
V
I
V
V
T
I
V
Energy losses include "tail"
See Fig. 9,10,14
V
V
T
I
V
Energy losses include "tail"
See Fig. 11,14
T
I
Energy losses include "tail"
Measured 5mm from package
V
V
ƒ = 1.0MHz
I
C
C
C
C
C
I
I
I
GE
GE
GE
CE
CE
CE
GE
GE
GE
GE
J
J
J
CC
GE
GE
CC
GE
GE
GE
CC
C
C
C
= 9.0A
= 9.0A, V
= 9.0A, V
= 6.0A, V
= 6.0A
= 25°C
= 150°C,
= 25°C V
= 9.0A
= 16A
= 9.0A , T
= 0V, I
= 0V, I
= 0V, I
= V
= V
= 0V, V
= 0V, V
= 0V, V
= ±20V
= 400V
= 15V
= 15V, R
= 400V, T
= 15V, R
= 15V, R
= 0V
= 30V
100 V, I
GE
GE
Conditions
Conditions
, I
, I
C
C
C
CE
CE
CE
C
C
CC
CC
= 250µA
= 1.0A
= 1.0mA
J
CC
GE
= 250µA
= 250µA
G
G
G
C
= 150°C
= 600V
= 10V, T
= 600V, T
J
= 480V
= 480V
= 9.0A
= 50
= 50 , V
= 50
= 125°C
= 480V
= 15V, R
See Fig.8
See Fig. 7
www.irf.com
J
J
= 25°C
See Fig.2, 5
V
= 150°C
CPK
GE
G
= 50
= 15V
< 500V