IRG4BC20K-SPBF International Rectifier, IRG4BC20K-SPBF Datasheet - Page 3

• Manufacturer Part Number: IRG4BC20K-SPBF
• Description: IGBT N-CHAN 600V 16A D2PAK
• Manufacturer: International Rectifier

Specifications of IRG4BC20K-SPBF

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 9A
• Current - Collector (ic) (max): 16A
• Power - Max: 60W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 16A
• Gate To Emitter Voltage (max): ±20V
• Package Type: D2PAK
• Pin Count: 2 +Tab
• Mounting: Surface Mount
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Power Dissipation Pd: 60W
• Collector Emitter Voltage V(br)ceo: 600V
• Collector Emitter Saturation Voltage Vce(sat): 2.8V
• Continuous Collector Current Ic: 16A
• Current Rating: 16A
• Leaded Process Compatible: Yes
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

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100
10
5.0
4.0
3.0
2.0
1.0
0.0
1
0.1
1
Square wave:
V
CE
60% of rated
, Collector-to-Emitter Voltage (V)
Ideal diodes
T = 25 C
voltage
J
o
V
20µs PULSE WIDTH
GE
= 15V
T = 150 C
J
1
o
10
f, Frequency (kHz)
RMS
100
10
1
For both:
Duty cycle: 50%
T = 125°C
T
Gate drive as specified
Power Dissipation = 1.8W
J
sink
5
T = 150 C
J
= 90°C
V
GE
o
10
, Gate-to-Emitter Voltage (V)
T = 25 C
10
J
o
Triangular wave:
V
5µs PULSE WIDTH
CC
15
Clamp voltage:
80% of rated
= 50V
3
20
100
A