IRG4IBC20WPBF International Rectifier, IRG4IBC20WPBF Datasheet

IGBT WARP 600V 11.8A TO220FP

IRG4IBC20WPBF

Manufacturer Part Number
IRG4IBC20WPBF
Description
IGBT WARP 600V 11.8A TO220FP
Manufacturer
International Rectifier
Datasheets
1.IRG4IBC20WPBF.pdf (8 pages)
2.IRG4IBC20W.pdf (9 pages)

Specifications of IRG4IBC20WPBF

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.6V @ 15V, 6.5A
Current - Collector (ic) (max)
11.8A
Power - Max
34W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
11.8A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
34W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Other names
*IRG4IBC20WPBF
INSULATED GATE BIPOLAR TRANSISTOR
Benefits
Absolute Maximum Ratings
Thermal Resistance
Features
• Lower switching losses allow more cost-effective
• Of particular benefit to single-ended converters and
• Low conduction losses and minimal minority-carrier
• Designed expressly for Switch-Mode Power
• 2.5kV, 60s insulation voltage
• Industry-benchmark switching losses improve
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest-generation IGBT design and construction offers
• Industry standard Isolated TO-220 Fullpak
www.irf.com
R
R
Wt
V
I
I
I
I
V
E
P
P
T
T
C
C
LM
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
boost PFC topologies 150W and higher
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
CM
Supply and PFC (power factor correction)
efficiency of all power supply topologies
tighter parameters distribution, exceptional reliability
applications
STG
outline
CES
GE
ARV
D
D
J
JA
JC
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Junction-to-Case - IGBT
Junction-to-Ambient, typical socket mount
Weight
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Parameter
Parameter
V
TM
G
n-channel
300 (0.063 in. (1.6mm) from case )
2.0 (0.07)
Typ.
–––
–––
E
C
IRG4IBC20W
10 lbf•in (1.1N•m)
-55 to + 150
TO-220 FULLPAK
Max.
11.8
± 20
600
200
6.2
52
52
34
14
@V
V
CE(on) typ.
Max.
V
GE
–––
3.7
65
CES
= 15V, I
= 600V
PD 91785A
C
2.16V
12/30/00
= 6.5A
Units
g (oz)
Units
°C/W
mJ
W
°C
V
A
V
1

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IRG4IBC20WPBF Summary of contents

Page 1

INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications V • 2.5kV, 60s insulation voltage • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff ...

Page 2

IRG4IBC20W Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Emitter-to-Collector Breakdown Voltage T V (BR)ECS Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th ...

Page 3

S qu are wave lta 0.1 1 Fig Typical ...

Page 4

IRG4IBC20W 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.1 0.02  0.01 SINGLE PULSE (THERMAL ...

Page 5

1MHz ies res 800 oes 600 C ies 400  C oes ...

Page 6

IRG4IBC20W  0 Ohm 150 C ° 480V 15V GE 0.6 0.4 0.2 0 Collector-to-emitter Current (A) C Fig ...

Page 7

L 50V 1 000V river sam e type as D.U 80% of Vce(m ax ote: Due to the 50V pow er supply, pulse w idth and inductor w ill increase to obtain ...

Page 8

IRG4IBC20W (. (. 3.7 0 (.145 ) 3.2 0 (.126 ) 1 6 5.8 0 (.62 2) 1.1 5 (.0 45 ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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