IRG4IBC20WPBF International Rectifier, IRG4IBC20WPBF Datasheet - Page 5

• Manufacturer Part Number: IRG4IBC20WPBF
• Description: IGBT WARP 600V 11.8A TO220FP
• Manufacturer: International Rectifier

Specifications of IRG4IBC20WPBF

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.6V @ 15V, 6.5A
• Current - Collector (ic) (max): 11.8A
• Power - Max: 34W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 11.8A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 34W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: *IRG4IBC20WPBF

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Fig. 9 - Typical Switching Losses vs. Gate
0.15
0.14
0.13
0.12
1000
800
600
400
200
0
0

Fig. 7 - Typical Capacitance vs.
V
V
T
I
1
J
C
CC
GE
Collector-to-Emitter Voltage
= 25
= 480V
= 15V
= 6.5A
R
V
10
G
CE
°

V
C
C
C
, Gate Resistance (Ohm)
C
, Collector-to-Emitter Voltage (V)
Resistance
GE
ies
res
oes
=
=
=
=

20
C ies
C oes
C res
0V,
C
C
C


ge
gc
ce
+ C
+ C
10
f = 1MHz
gc ,
gc
30
C
ce
SHORTED
40
50
100
0.01
0.1
10
1
20
16
12
Fig. 10 - Typical Switching Losses vs.
-60 -40 -20
8
4
0

R
V
V
0

GE
CC
Fig. 8 - Typical Gate Charge vs.
V
G
I
CC
C
= 15V
= 480V
= Ohm
= 400V
= 6.5A
Gate-to-Emitter Voltage
T , Junction Temperature ( C )
Junction Temperature
50
5
J
Q , Total Gate Charge (nC)
G
0
IRG4IBC20W
10
20
40
15
60
80 100 120 140 160
20

I =

I =

I =
C
C
C
°
3.25
25
6.5
13
A
A
A
5
30