IRG4BC30FDPBF International Rectifier, IRG4BC30FDPBF Datasheet - Page 3
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IRG4BC30FDPBF
Manufacturer Part Number
IRG4BC30FDPBF
Description
IGBT W/DIODE 600V 31A TO220AB
Manufacturer
International Rectifier
Datasheets
1.IRG4BC30FDPBF.pdf
(10 pages)
2.IRG4BC30FDPBF.pdf
(11 pages)
3.IRG4BC30FDPBF.pdf
(11 pages)
Specifications of IRG4BC30FDPBF
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.8V @ 15V, 17A
Current - Collector (ic) (max)
31A
Power - Max
100W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
31A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
100W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Package
TO-220AB
Circuit
Co-Pack
Switching
Hard
Switching Speed
FAST 1-8 kHz
Vces (v)
600
Ic @ 25c (a)
31
Ic @ 100c (a)
17
Vce(on)@25c Typ (v)
1.59
Vce(on)@25c Max (v)
1.80
Ets Typ (mj)
2.02
Ets Max (mj)
3.9
Qrr Typ Nc 25c
80
Qrr Max Nc 25c
180
Vf Typ
1.40
Pd @25c (w)
100
Environmental Options
PbF
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Other names
*IRG4BC30FDPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRG4BC30FDPBF
Manufacturer:
XILINX
Quantity:
101
www.irf.com
1000
100
20
16
12
10
8
4
0
1
0.1
1
V
CE
, Collector-to-Emitter Voltage (V)
60% of rated
voltage
I
T = 25°C
J
T = 150°C
J
V
20µs PULSE WIDTH
GE
= 15V
1
f, Frequency (kHz)
10
A
RMS
1000
100
10
1
5
6
V
T = 150°C
GE
J
10
, Gate-to-Emitter Voltage (V)
7
T = 25°C
J
8
9
Duty cycle: 50%
T = 125°C
T
Gate drive as specified
Turn-on losses include
effects of reverse recovery
Power Dissipation = 21W
J
sink
V
5µs PULSE WIDTH
10
CC
= 90°C
= 50V
11
12
3
100
13
A
A