IRGB4064DPBF International Rectifier, IRGB4064DPBF Datasheet - Page 3
![IGBT ULT FAST DIO 600V TO-220AB](/photos/19/8/190856/4243257_sml.jpg)
IRGB4064DPBF
Manufacturer Part Number
IRGB4064DPBF
Description
IGBT ULT FAST DIO 600V TO-220AB
Manufacturer
International Rectifier
Datasheet
1.IRGB4064DPBF.pdf
(11 pages)
Specifications of IRGB4064DPBF
Igbt Type
Trench
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.91V @ 15V, 10A
Current - Collector (ic) (max)
20A
Power - Max
101W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Dc Collector Current
20A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
101W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +175°C
No. Of Pins
3
Rise Time
15ns
Rohs Compliant
Yes
Transistor Type
IGBT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRGB4064DPBF
Manufacturer:
RENESAS
Quantity:
11 450
www.irf.com
Fig. 1 - Maximum DC Collector Current vs.
100
0.1
24
20
16
12
40
30
20
10
10
8
4
0
0
Fig. 5 - Typ. IGBT Output Characteristics
1
0
0
1
Tc = 25°C
Tj = 175°C
Single Pulse
20
Fig. 3 - Forward SOA,
T
Case Temperature
2
40
T
C
J
= 25°C; T
= -40°C; tp = 80µs
60
10
4
V CE (V)
V CE (V)
80 100 120 140 160 180
T C (°C)
100µsec
DC
1msec
J
≤
6
V GE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
175°C
10µsec
100
8
1000
10
120
100
100
40
30
20
10
80
60
40
20
10
0
1
0
Fig. 6 - Typ. IGBT Output Characteristics
10
0
0
Fig. 2 - Power Dissipation vs. Case
Fig. 4 - Reverse Bias SOA
20
T
J
2
40
= 175°C; V
T
J
= 25°C; tp = 80µs
60
Temperature
4
IRGB4064DPbF
V CE (V)
V CE (V)
80 100 120 140 160 180
T C (°C)
100
CE
6
V GE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
= 15V
8
1000
10
3