IRGB4064DPBF International Rectifier, IRGB4064DPBF Datasheet - Page 5

• Manufacturer Part Number: IRGB4064DPBF
• Description: IGBT ULT FAST DIO 600V TO-220AB
• Manufacturer: International Rectifier

Specifications of IRGB4064DPBF

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.91V @ 15V, 10A
• Current - Collector (ic) (max): 20A
• Power - Max: 101W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Dc Collector Current: 20A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 101W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +175°C
• No. Of Pins: 3
• Rise Time: 15ns
• Rohs Compliant: Yes
• Transistor Type: IGBT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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T
T
J
J
= 175°C; L = 1mH; V
= 175°C; L = 1mH; V
600
500
400
300
200
100
350
300
250
200
150
100
50
24
20
16
12
0
0
8
4
0
0
0
0
Fig. 17 - Typical Diode I
Fig. 13 - Typ. Energy Loss vs. I
Fig. 15 - Typ. Energy Loss vs. R
4
4
25
E OFF
T
CE
J
8
8
E OFF
= 175°C
= 400V, R
CE
50
R G (Ω)
I C (A)
= 400V, I
I F (A)
12
12
R G = 47 Ω
E ON
R G = 100 Ω
R G = 22 Ω
R G = 10 Ω
75
E ON
G
16
RR
= 22Ω; V
16
CE
vs. I
= 10A; V
C
100
20
F
20
GE
G
= 15V.
24
GE
125
24
= 15V
1000
1000
100
100
10
10
20
16
12
1
8
4
0
0
0
0
Fig. 14 - Typ. Switching Time vs. I
td ON
Fig. 16- Typ. Switching Time vs. R
Fig. 18 - Typical Diode I
t R
t F
T
td OFF
td OFF
T
J
td ON
J
= 175°C; L=1mH; V
t F
t R
= 175°C; L=1mH; V
4
25
25
T
R
I
J
G
CE
= 175°C; I
= 22Ω; V
= 10A; V
8
IRGB4064DPbF
50
50
R G (Ω)
R G (Ω)
I C (A)
12
GE
F
GE
= 10A
= 15V
75
75
= 15V
CE
RR
16
CE
= 400V
= 400V
vs. R
100
100
20
G
C
G
125
125
24
5