IRG4PH50KDPBF International Rectifier, IRG4PH50KDPBF Datasheet - Page 5

IGBT W/DIODE 1200V 45A TO247AC

IRG4PH50KDPBF

Manufacturer Part Number
IRG4PH50KDPBF
Description
IGBT W/DIODE 1200V 45A TO247AC
Manufacturer
International Rectifier
Type
Ultrafastr
Datasheets

Specifications of IRG4PH50KDPBF

Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.5V @ 15V, 24A
Current - Collector (ic) (max)
45A
Power - Max
200W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Capacitance, Gate
2800 pF
Current, Collector
45 A
Energy Rating
5.73 mJ
Package Type
TO-247AC
Polarity
N-Channel
Power Dissipation
200 W
Resistance, Thermal, Junction To Case
0.64 °C/W
Speed, Switching
4 to 20 kHz
Transistor Type
NPN
Voltage, Collector To Emitter Shorted
1200 V
Voltage, Collector To Emitter, Saturation
3.28 V
Dc Collector Current
45A
Collector Emitter Voltage Vces
1.2kV
Power Dissipation Pd
200W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
Other names
*IRG4PH50KDPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG4PH50KDPBF
Manufacturer:
ON
Quantity:
10 000
Part Number:
IRG4PH50KDPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
Fig. 9 - Typical Switching Losses vs. Gate
7.0
6.6
6.2
5.8
5.4
4000
3000
2000
1000
0

V
V
T
0
I
J
C
Fig. 7 - Typical Capacitance vs.
CC
GE
1
Collector-to-Emitter Voltage
= 25
= 960V
= 15V
= 24A
800V
R
10
G
V
CE
°
R
, Gate Resistance (Ohm)
C
G

V
C
C
C
, Collector-to-Emitter Voltage (V)
Resistance
, Gate Resistance ( Ω )
GE
ies
res
oes

C
C
C
ies

oes

res
20
=
=
=
=
0V,
C
C
C
ge
gc
ce
+ C
+ C
10
30
f = 1MHz
gc ,
gc
C
ce
40
SHORTED
50
100
100
10
20
16
12
1
8
4
0
Fig. 10 - Typical Switching Losses vs.
-60 -40 -20
0

R
V
V

IRG4PH50KDPbF
V
I
GE
CC
Fig. 8 - Typical Gate Charge vs.
G
CC
C
= 15V
= 960V
= Ohm
= 400V
= 24A
Gate-to-Emitter Voltage
T , Junction Temperature ( C )
800V
5.0Ω
Junction Temperature
40
J
Q , Total Gate Charge (nC)
G
0
20
80
40
60
120
80 100 120 140 160

I =

I =

I =
C
C
C
160
°
48
24
12
A
A
A
5
200

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