IRG4PH50KDPBF International Rectifier, IRG4PH50KDPBF Datasheet - Page 7

• Manufacturer Part Number: IRG4PH50KDPBF
• Description: IGBT W/DIODE 1200V 45A TO247AC
• Manufacturer: International Rectifier
• Type: Ultrafastr

Specifications of IRG4PH50KDPBF

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.5V @ 15V, 24A
• Current - Collector (ic) (max): 45A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Capacitance, Gate: 2800 pF
• Current, Collector: 45 A
• Energy Rating: 5.73 mJ
• Package Type: TO-247AC
• Polarity: N-Channel
• Power Dissipation: 200 W
• Resistance, Thermal, Junction To Case: 0.64 °C/W
• Speed, Switching: 4 to 20 kHz
• Transistor Type: NPN
• Voltage, Collector To Emitter Shorted: 1200 V
• Voltage, Collector To Emitter, Saturation: 3.28 V
• Dc Collector Current: 45A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 200W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: *IRG4PH50KDPBF

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Fig. 14 - Typical Reverse Recovery vs. di
1 2 0 0
Fig. 16 - Typical Stored Charge vs. di
9 0 0
6 0 0
3 0 0
3 0 0
2 0 0
1 0 0
0
0
1 0 0
1 0 0
V = 2 00 V
T = 125°C
T = 25°C
R
J
J
I = 3 2A
I = 16A
I = 8 .0A
F
F
F
d i /dt - (A /µ s)
di /d t - (A /µ s)
f
f
I = 3 2 A
V = 200V
T = 125°C
T = 25°C
F
R
J
J
I = 1 6A
F
I = 8 .0 A
F
f
/dt
f
/dt
1 0 0 0
1 0 0 0
Fig. 15 - Typical Recovery Current vs. di
1 0 0 0
1 0 0
4 0
3 0
2 0
1 0
1 0
0
1 0 0
1 0 0
Fig. 17 - Typical di
IRG4PH50KDPbF
V = 200 V
T = 125°C
T = 25°C
V = 200V
T = 125°C
T = 25°C
R
J
J
I = 8 .0A
R
J
J
F
I = 16 A
I = 8 .0 A
F
F
di /dt - (A /µ s)
di /d t - (A /µ s)
I = 3 2 A
I =1 6A
F
f
F
f
(rec)M
I = 32 A
F
/dt vs. di
f
/dt
7
f
/dt
1 0 0 0
1 0 0 0