IXGH32N60B IXYS, IXGH32N60B Datasheet - Page 2

• Manufacturer Part Number: IXGH32N60B
• Description: IGBT HIPERFAST 600V 60A TO-247AD
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGH32N60B

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 32A
• Current - Collector (ic) (max): 60A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 60A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247AD
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 64
• Ic90, Tc=90°c, Igbt, (a): 32
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.3
• Tfi, Typ, Tj=25°c, Igbt, (ns): 85
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.2
• Rthjc, Max, Igbt, (°c/w): 0.62
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

© 2000 IXYS All rights reserved
Symbol
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
IXGH 32N60B characteristic curves are located in the IXGH 32N60BU1 data
sheet.
d(on)
d(off)
d(on)
d(off)
ri
fi
ri
fi
fs
off
on
off
oes
thJC
thCK
ies
res
g
ge
gc
Test Conditions
I
Pulse test, t £ 300 ms, duty cycle £ 2 %
Inductive load, T
I
V
Remarks: Switching times may
increase for V
higher T
Inductive load, T
I
V
Remarks: Switching times may
increase for V
higher T
C
C
C
CE
CE
= I
= I
= 0.8 V
= 0.8 V
= I
V
I
C90
C90
C
CE
= I
C90
, V
, V
J
J
= 25 V, V
C90
; V
or increased R
or increased R
GE
GE
CES
CES
, V
CE
= 15 V, L = 100 mH
= 15 V, L = 100 mH,
CE
, R
CE
, R
GE
= 10 V,
(Clamp) > 0.8 • V
(Clamp) > 0.8 • V
= 15 V, V
G
G
GE
J
J
= R
= R
= 125°C
= 25°C
= 0 V, f = 1 MHz
off
off
G
G
= 4.7 W
= 4.7 W
CE
= 0.5 V
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
(T
J
CES
CES
= 25°C, unless otherwise specified)
CES
,
,
4,881,106
4,931,844
min.
15
Characteristic Values
5,017,508
5,034,796
2500
typ.
0.25
230
125
100
120
120
0.8
0.3
1.4
20
70
23
50
25
30
80
25
35
max.
0.62 K/W
5,049,961
5,063,307
150
200
150
1.6 mJ
35
75
K/W
mJ
mJ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
S
5,187,117
5,237,481
TO-247 AD (IXGH) Outline
Dim. Millimeter
5,486,715
5,381,025
A
B
C
D
E
F
G
H
J
K
L
M
N
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
15.75 16.26 0.610 0.640
Min. Max.
3.55 3.65 0.140 0.144
4.32 5.49 0.170 0.216
1.65 2.13 0.065 0.084
10.8 11.0 0.426 0.433
5.4
1.0
4.7
0.4
1.5 2.49 0.087 0.102
-
IXGH32N60B
6.2 0.212 0.244
4.5 -
1.4 0.040 0.055
5.3 0.185 0.209
0.8 0.016 0.031
Min.
Inches
0.177
Max.
2 - 2